SE30AFGHM3/6A Discrete Semiconductor Products

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The SE30AFGHM3/6A is a single rectifier diode which operates with an average forward current of 3A (SE30AFGHM3) and 6A (SE30AFGHM6A). It is designed for use in a wide range of electronic, electrical and power distribution applications. This diode has an extremely low reverse leakage characterized by a low forward voltage drop. This makes it an ideal choice for applications where the smallest possible voltage drop is desired.

The SE30AFGHM3/6A is designed for use in DC power systems, AC power systems, alternating current (AC) power systems, and power supplies in general. It is used to convert alternating current to direct current, improve the efficiency of the system, and protect against overcurrents. It is a efficient, high-speed, high-performance device with high surge capability. Its leadless package design makes it easy to handle, and its small size makes it suitable for a range of applications.

The SE30AFGHM3/6A is a fast-recovery rectifier diode with a typical recovery time of 90ns. This recovery time is the time it takes the diode to switch back to a conducting state after it has been triggered by a reverse current. The diode has a forward voltage range of 35V to 200V, and a reverse voltage range of 200V to 700V. The package is filled with a liquid of specialised electrolyte which minimises the effect of thermal overstress.

The working principle of the SE30AFGHM3/6A can be best understood in the context of electron flow. In the forward bias, electrons are drawn from the anode towards the cathode, creating a potential difference across its terminals. This potential difference creates an electric field in which positively charged ions are attracted to the anode and negatively charged ions are attracted to the cathode emitter. This is the forward bias region of the diode.

In the reverse bias, the electrons are repelled from the anode and are attracted towards the cathode. This results in a current flow in the opposite direction to the forward bias current, and a depletion region is formed in which the majority carriers (electrons) are removed. This is the reverse bias region of the diode. When a reverse voltage exceeding the breakdown voltage of the diode is applied, a large amount of current flows through the diode and it begins to breakdown.

In summary, the SE30AFGHM3/6A is a single rectifier diode used for a wide range of applications. It has a typical recovery time of 90ns, a forward voltage range of 35V to 200V and a reverse voltage range of 200V to 700V. It provides an efficient and high performance device with high surge capability. It is designed for use in DC power systems, AC power systems, power distribution systems, power supplies and other electronic applications. Its small size and leadless package design make it easy to handle and install.

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