SESD8008MUTAG Allicdata Electronics
Allicdata Part #:

SESD8008MUTAG-ND

Manufacturer Part#:

SESD8008MUTAG

Price: $ 0.23
Product Category:

Circuit Protection

Manufacturer: ON Semiconductor
Short Description: TVS DIODE 3.3V 8.1V 14UDFN
More Detail: N/A
DataSheet: SESD8008MUTAG datasheetSESD8008MUTAG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.21524
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Supplier Device Package: 14-UDFN (5.5x1.5)
Package / Case: 14-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: --
Current - Peak Pulse (10/1000µs): 16A
Series: --
Voltage - Breakdown (Min): 5.5V
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 8
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressors) - Diodes are electronic components which are used to protect electronic circuits from high-energy surges. The SESD8008MUTAG is a monolithic, ultra-low capacitance TVS diode that provides superior clamping performance for a variety of sensitive applications. It is designed for use in high-speed data, GaAs, and other communication systems that require ESD protection.

The SESD8008MUTAG is a low capacitance uni-directional diode capable of dissipating up to 8A surge current. It is a ceramic-construction diode with an encapsulated polymeric backside cap that offers excellent EMI/RFI shielding along with ESD protection. It is designed to protect up to 15kV of ESD energy which is sufficient for meeting the highest IEC level 4 requirements for contact and air discharge. The low parasitic capacitance of this diode ensures that it does not cause distortion, crosstalk, and signal reflectance. The presence of an internal over-voltage protection feature ensures that the device does not enter the avalanche breakdown region, even with an over-voltage signal.

The working principle behind the SESD8008MUTAG is simple. It is a voltage-dependent device that acts like a fast-acting fuse. When the voltage reaches a certain level, usually between 18V-25V, the diode passes the current forward. The internal structure of the device consists of two electrodes – the anode and the cathode – sandwiching a silica layer. When the voltage on the anode is applied across the silica layer, it rapidly breaks down and the device conducts a current to the cathode.

The SESD8008MUTAG TVS diode is commonly used in a variety of applications including automotive data bus systems, consumer electronics, industrial automation, telecom networks, servers, computer peripherals, and more. It is an excellent option for protecting electronic devices such as computers, laptops, mobiles, tablets, cameras, and many other electronic items from damage caused by electrostatic discharge (ESD). The device is also used to protect circuits from over-voltage events.

The SESD8008MUTAG is an excellent choice for a wide range of electronic protection requirements. It is a reliable device with a long service life and ensures that delicate electronic components are not damaged due to ESD or over-voltage events. The device also features low leakage current, low capacitance, low inductance, and low self-inductance, making it suitable for a variety of high-speed data, GaAs, and other communication systems.

The specific data is subject to PDF, and the above content is for reference

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