| Allicdata Part #: | SF11GHB0G-ND |
| Manufacturer Part#: |
SF11GHB0G |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 50V 1A DO204AL |
| More Detail: | Diode Standard 50V 1A Through Hole DO-204AL (DO-41... |
| DataSheet: | SF11GHB0G Datasheet/PDF |
| Quantity: | 1000 |
| 18000 +: | $ 0.04234 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-204AL (DO-41) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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The SF11GHB0G belongs to the class of single rectifier diodes. The device exhibits fast recovery commutation and an operating temperature range from -50 to 125 ˚C. It is axial float mounted, has a PIV voltage of 1.5kV, and a current rating of 1.0A. It was designed with a compact size, making it ideal for installations requiring a small footprint.
The SF11GHB0G is built using a recycled silicon crystal wafer, and its physical characteristics are both robust and uniform. This makes it possible to reduce the cost of manufacturing and easily integrate into existing production lines. Additionally, it reduces the cost of operating temperature control while the low-voltage rating of the device is suitable for consumer applications in its intended operating environment.
The working principle of the SF11GHB0G is based on its ability to rectify an alternating current into a single unidirectional current. When the anode voltage is greater than the cathode voltage, the diode’s gate is opened and it turns the current on. This allows the current to flow from the anode to the cathode and the device is turned ‘on’.
When the anode voltage is less than the cathode voltage, the diode’s gate is then shut and the current to the anode is blocked. This results in the device being turned ‘off’ as the flow of current is not possible. This phenomenon is known as reverse biased operation and prevents the device from being damaged by the current.
The SF11GHB0G is particularly well-suited for high frequency and power switching applications, including AC/DC power conversion, motor control, telecommunications, and other applications where high speed switching is required. The device’s fast recovery time ensures minimal circuit disruption and reduces electromagnetic interference.
The SF11GHB0G is also often used as a bidirectional part and as a voltage limit device. Bidirectional diodes are used to allow two electric currents to flow in two directions. Voltage limit devices are used to limit the amount of power drawn from external sources and prevent the current from exceeding a predetermined threshold.
In summary, the SF11GHB0G is a fast rectifier diode suitable for a variety of applications in both commercial and industrial settings. It offers a low-voltage rating and a fast recovery time, making it an ideal choice for use in high frequency and power switching applications. Its robust construction, low cost of production, and bidirectional capability make the SF11GHB0G an attractive solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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SF11GHB0G Datasheet/PDF