SF15G R1G Allicdata Electronics
Allicdata Part #:

SF15GR1G-ND

Manufacturer Part#:

SF15G R1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 300V 1A DO204AL
More Detail: Diode Standard 300V 1A Through Hole DO-204AL (DO-4...
DataSheet: SF15G R1G datasheetSF15G R1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04995
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The SF15G R1G is a single diode rectifier that utilizes silicon and has a maximum reverse voltage of 1500 V, with a maximum RMS forward current of 1 A. The SF15G R1G is a widely used device in a variety of applications, ranging from automotive, telecommunications, computer, industrial, and audio/visual equipment. The SF15G R1G can also be used in high-side rectedifiers and battery chargers.

The main characteristic of the SF15G R1G is its low reverse leakage current, which makes it very beneficial in power applications. During a reverse bias condition, these low leakage currents create minimal power dissipation. This diode also has a reverse recovery time of 35ns and a maximum reverse recovery voltages of 25V. These characteristics make it ideal for applications where fast switching and high temperature operation have to be taken into consideration.

The working principle of the SF15G R1G is based on the properties and characteristics of silicon. When an anode current or voltage is applied to the anode, an electric field is set up in the opposite direction of the applied voltage and forces the flow of electrons to the anode. As the anode current gets bigger, the conduction band of the silicon becomes more tightly packed with electrons, increasing the number of electrons flowing through the diode.

As the electric field inside the diode increases, it causes a decrease in the anode voltage, which, in turn, causes the electric field to be reversed and reversed current starts to flow from the anode to the cathode. This process continues until the electric field reaches the threshold voltage, when the current flow stops.

The SF15G R1G is a versatile device and can be used in multiple applications that require a low reverse leakage current, low forward voltage drop, and fast recovery time. It can also be used in high-side rectifiers and battery chargers, as it has a maximum reverse voltage of 1500V and a maximum RMS current of 1 A. It also has a reverse recovery time of 35ns, which makes it highly suitable for high-speed switching.

In conclusion, the SF15G R1G is a single diode rectifier that is widely used in a variety of applications where low reverse leakage current, low forward voltage drop, and fast recovery time are the key requirements. It has a maximum reverse voltage of 1500V, a maximum RMS current of 1 A, and a reverse recovery time of 35ns. The SF15G R1G is also recommended for applications where high-speed switching is critical.

The specific data is subject to PDF, and the above content is for reference

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