Allicdata Part #: | SF1608GHC0G-ND |
Manufacturer Part#: |
SF1608GHC0G |
Price: | $ 0.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 16A TO220AB |
More Detail: | Diode Standard 600V 16A Through Hole TO-220AB |
DataSheet: | SF1608GHC0G Datasheet/PDF |
Quantity: | 1000 |
50000 +: | $ 0.27783 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The SF1608GHC0G is a diode belonging to the single rectifiers family. It is a high-performance, cost effective component designed with advanced technology. It is suitable for voltage regulator, power management, and other electronics applications.
The SF1608GHC0G has a wide range of operating temperature from -55 ˚C up to 175˚C, making it more capable in performing in tough environmental conditions than other available rectifiers. This component is also able to withstand higher reverse voltages than other rectifiers without suffering any damage.
This rectifier is designed with a low-leakage current, ensuring that it can maintain its specified performance under varying conditions. In addition, the device also has a high heat resistance power dissipation capability, which helps it stay safe in high-temperature applications.
The SF1608GHC0G has a very low forward voltage drop which allows it to efficiently convert energy from one source to another. This feature allows the rectifier to perform efficiently even in low-voltage applications. The device also has a low reverse voltage capability which allows it to operate effectively even in high-voltage settings. The high reverse cross-conduction current capability allows the component to sustain a high voltage for an extended period without suffering any damage.
The SF1608GHC0G is a highly reliable and robust component, capable of operating under extreme environmental conditions. It features a low forward voltage drop which enables the device to convert electrical energy from one source to another quickly and efficiently. This rectifier also has a low reverse voltage capability which allows it to effectively perform even in high-voltage settings.
The SF1608GHC0G has a high breakdown voltage used to form a highly durable Zener diode. It also has an optimized gate structure which can help improve temperature stability and prevent shorting. The device utilizes the self-healing properties of the active layers. This feature is used to protect it from damage in the event of reverse current or pinch off.
The SF1608GHC0G is designed to provide efficient and reliable performance both in low and high-temperature applications. This component is resistant to a wide range of environmental factors including humidity, dust, corrosion, and vibration, giving it outstanding durability and reliability. The device also features a low input capacitance, enabling it to respond quickly and accurately to transient events.
The SF1608GHC0G is a silicon-based rectifier, utilizing a high-temperature metallization process for fabrication. It is manufactured using the advanced bipolar process to further improve its power dissipation capabilities. The gold-dies feature ensures excellent thermal conductivity and reliability.
Overall, the SF1608GHC0G is a high-performance, cost-effective rectifier designed with advanced technology. Its wide range of operating temperature and low forward voltage drop makes it suitable for voltage regulation, power management, and other electronics applications. It has the capability to withstand reverse voltages and high temperatures without suffering damage. In addition, the low input capacitance, optimized gate structure, and self-healing layers prevent the device from suffering damage in the event of reverse current or pinch off.
The specific data is subject to PDF, and the above content is for reference
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