SF48GHB0G

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The SF48GHB0G is an ultra-low forward voltage, ultra-low leakage current 8A Schottky barrier rectifier diode device that consists of one leaded schottky diode in a DFN2.2x2.2 package. It offers very low power loss, high efficiency, and low power consumption, while providing superior performance levels. It also features a 30ns maximum storage time and 85ns maximum switching time.

Application Field

The SF48GHB0G diode was designed for use in MOSFET and IGBT power switching circuits; power management circuits; and in general, circuit designs that require low forward voltage drop, low leakage current, and moderate speed. It can be used in consumer electronics, home appliances, computers, telecommunications, and other industrial control fields.

Working Principle

Schottky barrier rectifiers work according to the principle of thermionic emission. When the external circuit of a Schottky rectifier is connected to a voltage source, the semiconductor junction formed between the silicon and metal layer develops a barrier voltage, which causes a depletion region to form across the junction. As the depletion region expands, the barrier voltage increases gradually, and current flow through the diode is blocked until the barrier voltage becomes sufficient to permit the current to flow, and the depletion region becomes completely depleted. At this point, a forward bias voltage is applied across the diode, and the external circuit is now connected to the voltage source.

When the external circuit is not connected to a voltage source, the depletion region decreases until it reaches an equilibrium point which corresponds to the reverse BV-R maximum described in the device data sheet. In other words, the depletion region blocks off any further conduction while the diode remains reverse-biased.

When a forward bias voltage is applied to the diode, electrons from the metal layer in the diode are thermionically emitted through the barrier voltage, thus bypassing the depletion region. This process allows for the current to flow and is known as the Schottky effect.

The SF48GHB0G offers extremely low forward voltage drop and low leakage current in order to gain high efficiency and power efficiency. The maximum storage time of 30ns and maximum switching time of 85ns ensure that the diode can deliver a fast switching time while delivering superior performance levels.

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