SF61GHA0G

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The SF61GHA0G is a rectifier diode capable of withstanding high surge current and applicable to inverters, variable speed drives, UPS, free-wheeling and polarity protection applications. It is part of Vishay Semiconductor\'s portfolio of SiC Schottky barrier diodes, a family of wide-bandgap semiconductor devices having become increasingly popular in high-power applications due to their excellent performance.

The SF61GHA0G has a voltage rating of 600V, and a repetitive peak reverse voltage of 600V. The maximum average forward output current is 2A, and its maximum reverse current is 5 µA. The forward voltage drop at maximum rated current is 650mV. It also has low thermal resistance of 4C/W, making it one of the most efficient rectifier diodes available.

The diode is designed with a silicon carbide Schottky barrier structure with a high-voltage, low forward-voltage drop, reverse recovery and low heavy-metal-oxide-semiconductor (HOMOS) capacitance. It features an anode layer formed by Arsenic-Doped SiC, a heavily-doped N-type collector layer and a heavily-doped P-type chamber layer for the drain. This structure allows good electrical performance and durability, low thermal resistance and no reverse recovery. Its double-side cooling technology provides high functionality in high-temperature operating conditions.

The working principal of the SF61GHA0G is relatively simple. The diode is forward biased when a positive voltage is applied to its anode, while a negative voltage applied to its cathode causes it to be reverse biased. During this reverse bias, the voltage across the diode is the same as the applied voltage, the forward voltage drop is zero and the reverse current is zero. When the applied voltage goes below the reverse breakdown voltage of the diode, the reverse current starts to flow, resulting in the current being limited by the built-in resistance of the diode.

When the forward bias is applied, the applied voltage begins to forward bias the diode, resulting in a small forward voltage drop due to the built-in resistance of the diode. The forward current is limited by the applied voltage minus the forward voltage drop. The forward voltage drop increases as the forward current increases, resulting in the current being limited by the diode’s resistance. As the diode heats up, the forward voltage drop increases even further, again limiting the forward current.

The SF61GHA0G is suitable for applications such as AC to DC converters, General-purpose power supplies, Free-wheeling applications, Reactors, Inverters, Uninterruptible power supplies (UPS), Variable speed drives (VSD) and Polarity protection.

The SF61GHA0G is the ideal choice for applications requiring high forward current, low reverse leakage current, and low forward voltage drop. It is an excellent choice for high efficiency applications due to its low thermal resistance, wide operating temperature range and ultra-low forward voltage drop.

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