SFAF802GHC0G Allicdata Electronics
Allicdata Part #:

SFAF802GHC0G-ND

Manufacturer Part#:

SFAF802GHC0G

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 8A ITO220AC
More Detail: Diode Standard 100V 8A Through Hole ITO-220AC
DataSheet: SFAF802GHC0G datasheetSFAF802GHC0G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.20143
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are components found in a variety of electrical and electronic circuits and systems. Generally, they are used as rectifiers. Single diodes rectify, or pass, a single electrical signal in one direction only. This single electrical signal is typically an alternating current (AC). In rectification, an AC signal is made of many small pulses that alternate between positive and negative polarity. The single diode allows only the positive pulses to pass through, completely blocking the negative pulses. This process creates a modified version of the original AC signal.

The SFAF802GHC0G is an example of a high-speed semiconductor diode available from surface mount technology manufacturers. This diode is a single diode rectifier, used to rectify an AC signal. The SFAF802GHC0G consists of an ultra-high-speed power rectifier, which features very low leakage current, a high surge forward current capability, and very fast reverse recovery time. This makes it suitable for a variety of power switching applications, including switching regulators, freewheeling diodes, rectifying and buffer circuits, and duty cycle control circuits.

The SFAF802GHC0G is made of a gallium arsenide (GaAs) material wafer, and contains an emitter-base and collector structure. The collector is made of an aluminum oxide (Al2O3) layer, and the emitter-base contact is made of a doped polysilicon layer. The entire structure is provided with passivation, typically with metal-oxide-semiconductor (MOS) dielectrics. The contacts are then metalized to enable electrical interconnection. The whole package is then encapsulated in a square metal can for added protection.

The working principle of the SFAF802GHC0G is based on the momentary flow of electric current for the duration of the positive pulse of the AC signal, allowing only it to pass through. The diode also acts as a conductor as soon as the positive cycle is detected and as soon as it ends, the diode resumes its blocking state, stopping the flow of electrons. This capability makes this diode ideal for a variety of power switching applications.

The SFAF802GHC0G is suitable for a variety of different AC applications, such as automotive power switching circuits, home appliances, and consumer electronics. The device’s high surge forward current capability and very low leakage current make it ideal for AC switching regulators and freewheeling diodes.

In conclusion, the SFAF802GHC0G is a single diode rectifier that is ideal for applications in AC power switching circuits and consumer electronics. It is made of a gallium arsenide material wafer, and its working principle is based on the momentary flow of electric current for the duration of the positive pulse of the AC signal. The SFAF802GHC0G’s high surge forward current capability and very low leakage current make it ideal for AC switching regulators, freewheeling diodes, and other power switching applications.

The specific data is subject to PDF, and the above content is for reference

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