SFS1007GHMNG Allicdata Electronics
Allicdata Part #:

SFS1007GHMNG-ND

Manufacturer Part#:

SFS1007GHMNG

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 500V 10A TO263AB
More Detail: Diode Standard 500V 10A Surface Mount TO-263AB (D²...
DataSheet: SFS1007GHMNG datasheetSFS1007GHMNG Datasheet/PDF
Quantity: 1000
4000 +: $ 0.23430
Stock 1000Can Ship Immediately
$ 0.26
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 500V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The SFS1007GHMNG is a high-temperature single switch rectifier diode specifically designed for pulsed DC applications and power supplies. The SFS1007GHMNG is capable of providing exceptionally high switching capability and high N-channel efficiency in high temperature operation, making it an ideal solution for applications such as motor drives, DC/DC converters and switchmode applications operating in temperature ranges of -40°C to 150°C. This device is able to provide excellent thermal resistance and allows for a robust and reliable design.

The SFS1007GHMNG is constructed using an N-channel device structure with an internal dielectric which reduces conduction losses while allowing for a very low forward voltage drop. This device has a breakdown voltage of 200V, an on-state voltage of 9V and a maximum on-state current of 5.0A. It also has a maximum forward voltage of 4V. This device is capable of switching in both polarity and can be used as either a single or multiple diode for DC-DC power supply designs.

The working principle of the SFS1007GHMNG is based on a junction reaction which causes the current to flow from anode to cathode. When the electrical potential across the diode is lower than its breakdown voltage, a semiconductor bridge will be formed between its two terminals; this bridge is responsible for the flow of current in solar cells, diodes and its other applications. When a reverse voltage is applied, the electric field across the junction will oppose the current flow and blocks it, preventing the current from flowing. When the forward voltage is applied, the electric field will support the current flow and allow it to flow freely. In addition, the SFS1007GHMNG also produces very low loss, allowing it to perform efficiently even under extreme operating conditions.

The SFS1007GHMNG is designed to provide fast switching characteristics, allowing it to be used in a variety of DC-DC applications including motor drives, LED lighting, battery charging and energy management. It is also used in power electronics which require high efficiency operation in high temperature applications. These features make it an excellent choice for voltage rectification, dynamic voltage control, current limit control and signal switching applications.

Overall, the SFS1007GHMNG is an ideal solution for applications requiring high temperature operation and fast switching. With its robust and reliable design, it offers exceptional performance in a wide range of applications. Its low loss, low voltage drop and high switching capability make it an invaluable component for applications ranging from motor drives to LED lighting to energy management. Whether it is used in single or multiple diode configurations, the SFS1007GHMNG is the perfect choice for a wide range of high temperature applications.

The specific data is subject to PDF, and the above content is for reference

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