
Allicdata Part #: | SGA-0163Z-ND |
Manufacturer Part#: |
SGA-0163Z |
Price: | $ 0.39 |
Product Category: | RF/IF and RFID |
Manufacturer: | RFMD |
Short Description: | IC AMP HBT SIGE 4500MHZ SOT-363 |
More Detail: | RF Amplifier IC Cellular, PCS, GSM, UMTS 0Hz ~ 4.5... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.34398 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 0Hz ~ 4.5GHz |
P1dB: | -1.8dB |
Gain: | 12dB |
Noise Figure: | 4.6dB |
RF Type: | Cellular, PCS, GSM, UMTS |
Voltage - Supply: | 2.1V |
Current - Supply: | 6mA ~ 10mA |
Test Frequency: | 1.95GHz |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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RF amplifiers are important components in any wireless communication system. A typical RF amplifier is designed to amplify an input RF signal while still maintaining a high level of gain, frequency stability, and efficiency. This is accomplished by a combination of active (transistors and other semiconductor devices) and passive (resistor-capacitor, inductor, and transformer) components. The SGA-0163Z is a three-stage RF amplifier designed for two different applications.The first application is in the mobile base station for GSM and CDMA systems. It is designed to provide a high level of gain, low distortion, wide dynamic range, and low noise figure performance. The second application is for high-power, low-noise amplifiers used in satellite communications systems.The SGA-0163Z RF amplifier is constructed using three stages, each stage composed of a different semiconductor device. The first stage is an N-Channel Enhancement-Mode Junction Field Effect Transistor (JFET). This is followed by a cascode amplifier made of two alternating NPN and PNP transistors. The third stage is an integrated circuit amplifier, which consists of several transistors and other passive components. All of the stages are interconnected by a network of resistors, capacitors, and inductors.The SGA-0163Z RF amplifier operates using an input voltage of 3-14VDC. The output power for the device is 2W for GSM and 3W for CDMA. This power is amplified with an associated gain of 24dB for GSM and 28dB for CDMA. The complementary audio frequency range of the device is 5-550MHz and the operating temperature range is -20°C to +75°C.The working principle of the SGA-0163Z involves providing an input signal, which is amplified in the first stage using the JFET. This stage amplifies the signal to a suitable level for the remaining stages of the amplifier. The cascode circuit amplifies the signal produced by the JFET, increasing its gain further and preventing the input amplifier from saturating. The integrated circuits in the third stage further increase the gain of the signal and also provide protection against RF interference and overload.In addition to its wide range of operating parameters, the SGA-0163Z RF amplifier offers a high level of design flexibility, allowing the user to customize the amplifier to best fit their application. Furthermore, the SGA-0163Z is available in various package sizes, making it suitable for most applications.Overall, the SGA-0163Z RF amplifier is a high performance, versatile device that is suited for use in GSM and CDMA base station products, as well as high-power satellite communications systems. Its wide range of operating parameters and good noise figure performance make it a robust solution for wireless communication systems requiring an amplifier of this type.
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