SGB10N60AATMA1 Allicdata Electronics
Allicdata Part #:

SGB10N60AATMA1TR-ND

Manufacturer Part#:

SGB10N60AATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 20A 92W TO263-3
More Detail: IGBT NPT 600V 20A 92W Surface Mount PG-TO263-3
DataSheet: SGB10N60AATMA1 datasheetSGB10N60AATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 320µJ
Base Part Number: 10N60
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 10A, 25 Ohm, 15V
Td (on/off) @ 25°C: 28ns/178ns
Gate Charge: 52nC
Input Type: Standard
Series: --
Power - Max: 92W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Current - Collector Pulsed (Icm): 40A
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SGB10N60AATMA1 is an improved type of single IGBT (Insulated Gate Bipolar Transistor) that is used in a wide range of applications. It has a low forward voltage drop and a low gate charging current, making it an ideal choice for high current applications. The SGB10N60AATMA1’s working principle is based on the physical characteristics of an IGBT. An IGBT is composed of two junctions; a p-n junction between the collector’s base and an insulated gate. When the gate is turned ‘on’, current flows between the collector and emitter, causing a voltage drop, and activating the transistor. Turning the gate ‘off’, however, causes the transistor to become effectively open, thus drastically reducing current flow.The SGB10N60AATMA1 can handle up to 80 Amps of continuous drain current, making it a popular choice for power applications such as motor drives, inverters, and UPSs. It also has a built-in diode, which can protect equipment in the event of a reverse voltage application. As with most transistors, the SGB10N60AATMA1 has an inherent voltage drop of 2V during on-state operation, so it is important to factor this in to design considerations. The SGB10N60AATMA1 has a collector-emitter saturation voltage of 1.8V and a gate-emitter voltage of 5V. Due to its low gate charge, the SGB10N60AATMA1 can be switched at high frequencies - making it suitable for applications requiring quick switching.The SGB10N60AATMA1 is well suited for use in high current, low voltage applications such as motor drivers, DC-DC converters, automotive electronic systems and general-use switches. It can be used to switch high voltages, provided that adequate safety measures such as fuses and insulation barriers are in place. It is not suitable for use in high frequency applications, however, as it can be prone to overdriving.The SGB10N60AATMA1 is an ideal choice for efficient, low-voltage operation in a wide range of applications. Its low forward voltage drop and low gate charge make it an ideal choice for high current applications, while its built-in diode provides added safety in the event of a reverse voltage application. It can be used in a wide range of applications, provided that adequate safety measures are in place.

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