SGB15N60HSATMA1 Allicdata Electronics
Allicdata Part #:

SGB15N60HSATMA1TR-ND

Manufacturer Part#:

SGB15N60HSATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 27A 138W TO263-3
More Detail: IGBT NPT 600V 27A 138W Surface Mount PG-TO263-3
DataSheet: SGB15N60HSATMA1 datasheetSGB15N60HSATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 530µJ
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 15A, 23 Ohm, 15V
Td (on/off) @ 25°C: 13ns/209ns
Gate Charge: 80nC
Input Type: Standard
Series: --
Power - Max: 138W
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 27A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SGB15N60HSATMA1 is a single IGBT (Insulated Gate Bipolar Transistor). IGBTs are a type of transistor which has a higher switching speed than a regular Bipolar Junction Transistor (BJT). IGBTs have an insulated gate instead of a control electrode, allowing them to turn on and off more quickly than BJTs. They also provide better noise and thermal performance due to the insulation.

The application field and working principle of the SGB15N60HSATMA1 are quite varied. It can be used in a wide variety of applications, including motor controls, power converters, UPS systems, solar inverters, and motor drives. The IGBT can be used in motor control circuits to switch between inductive and resistive loads, providing excellent control of the motor speed.

The SGB15N60HSATMA1 is based on a PN (positive-negative) junction structure, similar to BJTs. It is an Enhancement-Mode type of device, meaning it is turned off when the gate voltage is 0V, and turned on when a positive voltage is applied to the gate. The voltage applied to the gate determines the resulting connection between the collector and emitter.

The device has a high blocking voltage, meaning it can handle a large amount of current without being damaged. It also has a low forward voltage drop, meaning it dissipates less power when conducting current. The IGBT also has a fast switching speed and low gate capacitance, making it ideal for high-speed applications.

SGB15N60HSATMA1 is capable of delivering excellent results compared to other IGBTs. It has high reliability, low power loss, and stable operation. Additionally, it has a low on-state current, meaning it can be used on circuits with low input voltages. This makes it suitable for a variety of applications, ranging from low-power to high-power applications.

In conclusion, the SGB15N60HSATMA1 is a very versatile single IGBT which can be used in a variety of applications. It has a PN junction structure, an enhancement-mode operation, a high blocking voltage, a low forward voltage drop, and a fast switching speed. It provides excellent reliability and thermal performance, making it suitable for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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