SGF23N60UFDM1TU

Switching Energy:	115µJ (on), 135µJ (off)
Base Part Number:	SG*23N60
Supplier Device Package:	TO-3PF
Package / Case:	SC-94
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	60ns
Test Condition:	300V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C:	17ns/60ns
Gate Charge:	49nC
Input Type:	Standard
Series:	--
Power - Max:	75W
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 12A
Current - Collector Pulsed (Icm):	92A
Current - Collector (Ic) (Max):	23A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

SGF23N60UFDM1TU is a Single Insulated-Gate Bipolar Transistor (IGBT) module specifically designed for applications in medium- to high-power switching and rectification. It is an enhancement type device, meaning it can handle higher power levels than ordinary transistors, and is particularly suitable for applications in robotics, industrial automation, and automotive electronics. This article explores the application fields and working principles of the SGF23N60UFDM1TU.

Application Field

The SGF23N60UFDM1TU is an ideal device for use in robotics, industrial automation, and automotive electronic applications due to its convenience, reliability and power capabilities. In the robotics industry, the device provides the required current needed to move robotic arm motors and other components with precision. This is especially useful in applications such as material handling, automated robotic assembly and welding, and precision robotics.The SGF23N60UFDM1TU can also be used in industrial automation applications such as servo motion systems, variable-speed drives, and position controllers. The device\'s high-current switching capabilities enable these systems to quickly and accurately control materials and components in automated manufacturing and assembly lines.In automotive electronics, the SGF23N60UFDM1TU is an ideal replacement for bulky and expensive inverters and diodes in automotive power systems. This device makes possible the development of lighter and more efficient automotive power systems, enabling longer vehicle ranges, better fuel economy, and improved safety.

Working Principle

The SGF23N60UFDM1TU is an enhancement type device that operates in two modes: blocking mode and saturable mode. In blocking mode, the device is off, meaning no current will flow through the device, even when voltage is applied to the gate. In saturable mode, the device is on and can handle high current levels.In order for the device to switch from blocking mode to saturable mode, a voltage needs to be applied to the gate. This voltage can be provided by an external power source, or by a pulse from an IC driver. The device will remain in saturable mode until the voltage is removed from the gate, at which point the device switches back to blocking mode and the current flow through it is interrupted.

Conclusion

The SGF23N60UFDM1TU is a single Insulated-Gate Bipolar Transistor (IGBT) module designed specifically for applications in medium- to high-power switching and rectification. Its high current switching capabilities make it ideal for use in robotics, industrial automation, and automotive electronics, where highly precise movements and power efficiency are key. The SGF23N60UFDM1TU is an enhancement type device, meaning it can handle higher current levels than ordinary transistors, and operates in two modes: blocking mode and saturable mode. When a voltage is applied to the gate, the device will switch from blocking mode to saturable mode and allow current to flow, which can then be interrupted by removing the voltage from the gate.

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