SGF23N60UFTU Allicdata Electronics
Allicdata Part #:

SGF23N60UFTU-ND

Manufacturer Part#:

SGF23N60UFTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 23A 75W TO3PF
More Detail: IGBT 600V 23A 75W Through Hole TO-3PF
DataSheet: SGF23N60UFTU datasheetSGF23N60UFTU Datasheet/PDF
Quantity: 343
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 343Can Ship Immediately
Specifications
Power - Max: 75W
Base Part Number: SG*23N60
Supplier Device Package: TO-3PF
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 300V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C: 17ns/60ns
Input Type: Standard
Switching Energy: 115µJ (on), 135µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
Current - Collector Pulsed (Icm): 92A
Current - Collector (Ic) (Max): 23A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The SGF23N60UFTU is an Insulated Gate Bipolar Transistors (IGBTs) designed for single use. It has a high voltage rating of 1300V, a collector current of collector current 23A, and a fast switching speed of 500V/ns. IGBTs are usually used in applications where fast switching, high efficiency, and high power output are needed.

The SGF23N60UFTU is a very efficient and high power device, with a low-leakage current of less than 10mA. It is specially designed to handle high temperatures and has a maximum operating temperature of 175°C. The device has a low gate-to-source voltage of 6.5V and low gate charge of 11nC. The device comes with a high current rating of 6A and low on-state resistance of 0.04 ohm.

The working principles of the SGF23N60UFTU are based on the principle of bipolar transistors. It works by connecting two semiconductor materials – an n-channel and a p-channel – together. The n-channel has a positive charge, while the p-channel has a negative charge. The two channels are biased in opposite directions, which creates a voltage gradient across them. When a voltage is applied to the gate, the electrons in the n-channel are repelled away, while the electrons in the p-channel are attracted towards it. This causes a current to flow between the two channels, which produces a voltage across the device.

The SGF23N60UFTU is suitable for use in a variety of applications, such as automotive, general purpose, and industrial applications. It is also used in high-speed switching applications, and has a high power output when compared to other IGBTs. The device can also be used in high-temperature applications with its high working temperature.

In conclusion, the SGF23N60UFTU is a single-use IGBT designed for high power applications, high speed switching and high efficiency. It has a high voltage rating of 1300V, a collector current of collector current 23A, and a fast switching speed of 500V/ns. It also has a low gate-to-source voltage of 6.5V and a low gate charge of 11nC. The device is suitable for use in a variety of applications, such as automotive, general purpose, and industrial applications. It is also used in high-temperature applications with its higher working temperature.

The specific data is subject to PDF, and the above content is for reference

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