Allicdata Part #: | SGF23N60UFTU-ND |
Manufacturer Part#: |
SGF23N60UFTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 23A 75W TO3PF |
More Detail: | IGBT 600V 23A 75W Through Hole TO-3PF |
DataSheet: | SGF23N60UFTU Datasheet/PDF |
Quantity: | 343 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 75W |
Base Part Number: | SG*23N60 |
Supplier Device Package: | TO-3PF |
Package / Case: | SC-94 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 300V, 12A, 23 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/60ns |
Input Type: | Standard |
Switching Energy: | 115µJ (on), 135µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 12A |
Current - Collector Pulsed (Icm): | 92A |
Current - Collector (Ic) (Max): | 23A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The SGF23N60UFTU is an Insulated Gate Bipolar Transistors (IGBTs) designed for single use. It has a high voltage rating of 1300V, a collector current of collector current 23A, and a fast switching speed of 500V/ns. IGBTs are usually used in applications where fast switching, high efficiency, and high power output are needed.
The SGF23N60UFTU is a very efficient and high power device, with a low-leakage current of less than 10mA. It is specially designed to handle high temperatures and has a maximum operating temperature of 175°C. The device has a low gate-to-source voltage of 6.5V and low gate charge of 11nC. The device comes with a high current rating of 6A and low on-state resistance of 0.04 ohm.
The working principles of the SGF23N60UFTU are based on the principle of bipolar transistors. It works by connecting two semiconductor materials – an n-channel and a p-channel – together. The n-channel has a positive charge, while the p-channel has a negative charge. The two channels are biased in opposite directions, which creates a voltage gradient across them. When a voltage is applied to the gate, the electrons in the n-channel are repelled away, while the electrons in the p-channel are attracted towards it. This causes a current to flow between the two channels, which produces a voltage across the device.
The SGF23N60UFTU is suitable for use in a variety of applications, such as automotive, general purpose, and industrial applications. It is also used in high-speed switching applications, and has a high power output when compared to other IGBTs. The device can also be used in high-temperature applications with its high working temperature.
In conclusion, the SGF23N60UFTU is a single-use IGBT designed for high power applications, high speed switching and high efficiency. It has a high voltage rating of 1300V, a collector current of collector current 23A, and a fast switching speed of 500V/ns. It also has a low gate-to-source voltage of 6.5V and a low gate charge of 11nC. The device is suitable for use in a variety of applications, such as automotive, general purpose, and industrial applications. It is also used in high-temperature applications with its higher working temperature.
The specific data is subject to PDF, and the above content is for reference
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