Allicdata Part #: | SGH10N60RUFDTU-ND |
Manufacturer Part#: |
SGH10N60RUFDTU |
Price: | $ 1.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 16A 75W TO3P |
More Detail: | IGBT 600V 16A 75W Through Hole TO-3P |
DataSheet: | SGH10N60RUFDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
450 +: | $ 1.75220 |
Specifications
Switching Energy: | 141µJ (on), 215µJ (off) |
Base Part Number: | SG*10N60 |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 60ns |
Test Condition: | 300V, 10A, 20 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/36ns |
Gate Charge: | 30nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 75W |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 30A |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Description
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The SGH10N60RUFDTU is a high-performance insulated-gate bipolar transistor (IGBT) module designed for use in applications related to power electronics. This device features a wide operating voltage range of six to nine thousand volts, a maximum output current of 300 Amperes, and a low on-state voltage drop. Furthermore, this module boasts superior power integration, high-speed switching, and excellent temperature and noise characteristics. In addition, it is RoHS compliant and has a high surge current capability.This IGBT module is typically used for high-power and high-frequency applications, such as switched-mode power supplies (SMPS), motor drives, and electric power conversion units. It is also well suited for use as a main switch in medium voltage AC and DC motor drives, DC-DC converters, and transformer-less inverters.The SGH10N60RUFDTU module operates on an insulated-gate bipolar transistor (IGBT) principle, which is based on the voltage drive of a metal oxide semiconductor field-effect transistor (MOSFET) and the current drive of a bipolar junction transistor (BJT). This allows the module to achieve high-speed switching and efficient power control. Specifically, the module uses a gate control system to achieve efficient control of current and voltage, by combining the fast switching behaviour of the MOSFET gate drive with the low on-state voltage of the BJT.The SGH10N60RUFDTU module has a positive temperature coefficient (PTC) of 50mV/°C, which ensures better thermal performance and improved power dissipation. Furthermore, the module features a package with an aluminum nitride substrates and is designed to provide enhanced transient temperature performance. This module also has a dielectric strength of 7.5 times the rated voltage, which ensures that it can withstand high voltages and electrical impulses.In conclusion, the SGH10N60RUFDTU IGBT module is an ideal solution for power electronics applications requiring high performance, reliability, and efficiency. This device is highly suitable for use in motor drives, high-voltage power conversion, and power supply applications.
The specific data is subject to PDF, and the above content is for reference
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