| Allicdata Part #: | SGH15N60RUFDTU-ND |
| Manufacturer Part#: |
SGH15N60RUFDTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 24A 160W TO3P |
| More Detail: | IGBT 600V 24A 160W Through Hole TO-3P |
| DataSheet: |  SGH15N60RUFDTU Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Power - Max: | 160W |
| Supplier Device Package: | TO-3P |
| Package / Case: | TO-3P-3, SC-65-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Reverse Recovery Time (trr): | 60ns |
| Test Condition: | 300V, 15A, 13 Ohm, 15V |
| Td (on/off) @ 25°C: | 17ns/44ns |
| Gate Charge: | 42nC |
| Input Type: | Standard |
| Switching Energy: | 320µJ (on), 356µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 15A |
| Current - Collector Pulsed (Icm): | 45A |
| Current - Collector (Ic) (Max): | 24A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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Applications of SGH15N60RUFDTU
The SGH15N60RUFDTU is used in various switching and power management applications including:
- Wind Power: The SGH15N60RUFDTU is suitable for use in variable speed wind turbine applications, where it helps regulate the speed of the turbine blades and control the power output. The IGBT’s high efficiency, low on-state voltage drop, and low thermal resistance make it an ideal choice for wind power applications.
- Automotive and Industrial Drives: The SGH15N60RUFDTU can also be used in automotive and industrial drives applications, where it helps to increase the efficiency of the drive and reduce the emissions. It is reliable and offers a low on-state voltage drop, making it an ideal choice for both automotive and industrial drives.
- Solar Inverters: The SGH15N60RUFDTU can also be used in solar inverters, powering energy conversion from the inverter to the grid. The IGBT is capable of high frequency switching and has excellent current capacity, making it an ideal choice for this application.
- Solar Powered Applications: The SGH15N60RUFDTU can be used in solar powered applications such as photovoltaic (PV) systems, as it is capable of high power and fast switching. It is an excellent choice for PV systems as it offers a low on-state voltage drop and excellent current capacity.
Working Principle of SGH15N60RUFDTU
The SGH15N60RUFDTU is a single IGBT, which stands for Insulated-Gate Bipolar Transistor. The IGBT is a power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and is used in switching and power management circuits. The IGBT is made up of two main components – a P-Channel MOSFET and an NPN Bipolar Junction Transistor (BJT).
The P-channel MOSFET acts as a switch, allowing for the control of voltage and current in the circuit. The NPN BJT is used as a low-resistance connection between the MOSFET and the output. The SGH15N60RUFDTU has a maximum drain-source voltage of 600 V, which can be increased when parallel connections are used. It also has a maximum drain current of 15 A.
The SGH15N60RUFDTU also has a low on-state voltage drop, which helps to reduce power losses. The IGBT also has a high gain and low thermal resistance, making it an ideal choice for applications operating at high frequency.
In summary, the SGH15N60RUFDTU is a single IGBT suitable for many power and switching applications. It is capable of high frequency switching and has a low on-state voltage drop. The IGBT also has a high gain and low thermal resistance, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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