| Allicdata Part #: | SGL40N150TU-ND |
| Manufacturer Part#: |
SGL40N150TU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 1500V 40A 200W TO264 |
| More Detail: | IGBT 1500V 40A 200W Through Hole TO-264 |
| DataSheet: |  SGL40N150TU Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Obsolete |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | -- |
| Voltage - Collector Emitter Breakdown (Max): | 1500V |
| Current - Collector (Ic) (Max): | 40A |
| Current - Collector Pulsed (Icm): | 120A |
| Vce(on) (Max) @ Vge, Ic: | 4.7V @ 15V, 40A |
| Power - Max: | 200W |
| Switching Energy: | -- |
| Input Type: | Standard |
| Gate Charge: | 140nC |
| Td (on/off) @ 25°C: | -- |
| Test Condition: | -- |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264 |
Description
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SGL40N150TU is a type of IGBT (Insulated Gate Bipolar Transistor), and it falls under the single transistor category. Designed for use in high-power converters, it is mostly used in hard switching applications, such as PWM controlled motor drives, UPS, welding machines and other related industries.An IGBT combines the best features of MOSFETs and bipolar transistors, wherein the resistive low-loss output characteristic of a MOSFET and the high input impedance of a bipolar transistor are merged. It has the capability to handle large currents and voltages. A single transistor can easily handle up to 600 volts and hundreds of amperes of current, making it the perfect choice for various high power applications. The SGL40N150TU is built on a CoolMOS™ C7 construction principle and features low EMI, low switching losses and fast recovery times. It has an optimized diode for high frequency operation, making it capable of processing high frequency switching needs. The SGL40N150TU has a maximum on-state or conduction voltage drop of about 1.4 volts, low for high current applications and suitable for hard switching applications. It has a maximum collector current of 40 amperes, a maximum collector-emitter voltage of 1500 volts, and a pulse collector current of up to 80 amperes.The working principle of an IGBT is based on fourpolarities. The first polarity is the positive gate voltage (Vg), which turns on the N-channel MOSFET-like devices. The second polarity is the negative gate voltage (Vge), which turns on the P-channel MOSFET-like devices. The third and fourth polarities are the collector (Ve) and emitter (Vc) voltage, respectively.When the gate voltage is applied, the P-channel and N-channel MOSFET-like devices come into action. This action also turns on the junction called the emitter-base junction. Due to this, a current starts flowing in the channel between emitter and collector. The conduction of the current is mainly due to the positive potential of the gate voltage applied. This potential forms a positive potential of the collector voltage and a negative potential of the emitter voltage. As long as a positive potential is applied to the gate, the current will flow. When the applied gate voltage is reversed, the current channel between emitter and collector gets reversed, which causes the IGBT to switch off. This switching off is known as the Forward Blocking mode.To conclude, the SGL40N150TU is an IGBT device predominantly used in high power converters, motor drives, welding machines and UPS. It combines the best features of MOSFETs and bipolar transistors and can easily handle up to 600 volts and hundreds of amperes of current. The working of an IGBT is based on four polarities; gate voltage, collector voltage, emitter voltage, and applied voltage. When a positive potential is applied to the gate, a current will flow in the channel between the emitter and collector. When the gate voltage is reversed, the IGBT will switch off.
The specific data is subject to PDF, and the above content is for reference
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