SGL50N60RUFTU Allicdata Electronics
Allicdata Part #:

SGL50N60RUFTU-ND

Manufacturer Part#:

SGL50N60RUFTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 80A 250W TO264
More Detail: IGBT 600V 80A 250W Through Hole TO-264
DataSheet: SGL50N60RUFTU datasheetSGL50N60RUFTU Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 250W
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 300V, 50A, 5.9 Ohm, 15V
Td (on/off) @ 25°C: 26ns/66ns
Gate Charge: 145nC
Input Type: Standard
Switching Energy: 1.68mJ (on), 1.03mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The SGL50N60RUFTU is a member of the SGL series of single IGBTs from STMicroelectronics. It is a 600V, 50A IGBT suitable for low-frequency operation and comes in a compact TO-220F package. The SGL50N60RUFTU features a maximum on-state voltage drop of 2.5V and a maximum collector-emitter saturation voltage of -2V at 50A collector current. It is designed to operate at a collector current of up to 50A and a collector-emitter voltage of up to 600V. It has a thermal resistance of 33.3 K/W and a maximum junction temperature of 150°C.

The SGL50N60RUFTU has a wide range of applications, such as motor control in consumer appliances, welding, transportation, renewable energy systems, and solar inverters. It is also suitable for low-frequency DC/AC power conversion and is reliable for prolonged use in circuits with pulsed or continuous operation. Due to its superior performance and cost-effectiveness, the SGL50N60RUFTU is widely used in the medical, aerospace, and automotive industries.

The SGL50N60RUFTU IGBT is based on a hexagonal cell layout for improved switching performance and increased performance. It uses STMicroelectronics’ patented E²Trench process, which minimizes losses and achieves very low on-state voltage drops. Additionally, it features a built-in fast turn-off device and a temperature-sensor controlled hysteresis to ensure safe operation. The SGL50N60RUFTU also features extremely short switching times resulting in reduced switching losses. The device is designed with minimal energy losses and low stray inductance.

The SGL50N60RUFTU’s operating principle is based on the property of the IGBT, which combines the fast switching speed of a bipolar transistor and the low ON-state voltage and ON-state losses of a MOSFET. The device is operated with a voltage signal applied to the gate pin. When a voltage signal is applied, the IGBT enables the current to flow from the collector to the emitter; when the signal is removed, the IGBT turns off and the current stops flowing. This gives the SGL50N60RUFTU its impressive fast switching speeds, low losses, and high switching frequencies.

The SGL50N60RUFTU from STMicroelectronics is a powerful and reliable IGBT, suitable for low-frequency applications. It offers an impressive maximum on-state voltage drop of only 2.5V at 50A collector current and a maximum junction temperature of 150°C, along with an excellent thermal resistance of 33.3K/W. The device is also designed with low stray inductance, providing minimal energy losses and high switching frequencies for improved performance. The SGL50N60RUFTU makes an excellent choice for power conversion applications, motor control, and welding.

The specific data is subject to PDF, and the above content is for reference

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