SGL5N150UFTU

Power - Max:	125W
Supplier Device Package:	TO-264
Package / Case:	TO-264-3, TO-264AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	600V, 5A, 10 Ohm, 10V
Td (on/off) @ 25°C:	10ns/30ns
Gate Charge:	30nC
Input Type:	Standard
Switching Energy:	190µJ (on), 100µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	5.5V @ 10V, 5A
Current - Collector Pulsed (Icm):	20A
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	1500V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

Single Gate Logic (SGL5N150UFTU) is a type of transistor used in various applications. It is an insulated gate bipolar transistor (IGBT) which is a combination of a field-effect transistor (FET) and a bipolar junction transistor (BJT). The SGL5N150UFTU provides high current and voltage capabilities along with fast switching performance, which make them ideal for power applications.

Application Field

IGBTs such as the SGL5N150UFTU are used in many applications. They are typically found in power supplies, motor drives, power inverters, switch-mode power supplies, solar inverters, and AC/DC converters. In addition, they are often used for induction heating applications and for switching power in medical electronics and high-voltage industrial applications.The SGL5N150UFTU is an easy to use component in a wide range of applications that benefit from its high efficiency, low switching losses, and low stand-by power. Due to its low voltage drop, it\'s suitable for a wide range of DC and AC systems, from portable electronics to solar panel inverters, motor drives, and industrial inverters. The SGL5N150UFTU also offers a high frequency operation, allowing for faster speed and reduced power levels.The SGL5N150UFTU is also suitable for heat pumps, plasma cutters, and welding equipment, where its low pass-through losses and high efficiency help to achieve optimal performance.

Working Principle

The SGL5N150UFTU is an insulated gate bipolar transistor (IGBT), which combines a FET and a BJT. A FET consists of a semiconductor channel, while a BJT consists of two semiconductor layers. In the SGL5N150UFTU, the FET gate insulation is combined with the BJT base region, forming a single device.The IGBT works on a principle similar to that of the MOSFET. The gate input voltage changes the conductivity of the FET channel, activating the BJT, which in turns changes the current flow through the device. To turn the device off, the gate voltage is adjusted to reduce the flow of current.However, unlike in the MOSFET, both the gate-to-source voltage and the gate-to-drain voltage are required for operation. The circuit is also capable of operating with gate voltages up to ±20V, meaning that high gate current is not required. This makes it ideal for applications where a high voltage drive is needed, such as in motor drives or inverters.

Conclusion

The SGL5N150UFTU is a low voltage, high efficiency insulated gate bipolar transistor (IGBT) used in various applications. It works on a principle similar to that of the MOSFET, with both the gate-to-source and the gate-to-drain voltage required for operation. The SGL5N150UFTU is suitable for a range of DC and AC systems, from portable electronics to AC/DC converters, and is used in many applications such as power supplies, motor drives, power inverters, switch-mode power supplies, solar inverters, and industrial inverters.

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