SGP02N60XKSA1 Allicdata Electronics
Allicdata Part #:

SGP02N60XKSA1-ND

Manufacturer Part#:

SGP02N60XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 6A 30W TO220-3
More Detail: IGBT NPT 600V 6A 30W Through Hole PG-TO220-3
DataSheet: SGP02N60XKSA1 datasheetSGP02N60XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 64µJ
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 2A, 118 Ohm, 15V
Td (on/off) @ 25°C: 20ns/259ns
Gate Charge: 14nC
Input Type: Standard
Series: --
Power - Max: 30W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Current - Collector Pulsed (Icm): 12A
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Part Status: Obsolete
Packaging: Tube 
Description

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The SGP02N60XKSA1 is a N-channel IGBT that has a maximum block voltage of 600V and a continuous collector current of 2A. This device is designed for high frequency PWM switching applications and has a low gate-charge drive requirement. It is ideal for applications such as light dimming systems, motor control, UPS, inverters and other power supplies. The SGP02N60XKSA1 works by allowing current to flow between its collector and emitter when a voltage is applied to the base. This moves a current through the IGBT channel, creating an electric field between the collector and emitter. This electric field creates a junction between the collector and emitter which allows the two parts to be connected. The SGP02N60XKSA1 is an ideal choice for applications where high power, low gate charge and fast switching speeds are needed. It also has a low switching loss, making it very efficient. Additionally, the device has excellent thermal characteristics and is able to withstand high operating temperatures. The SGP02N60XKSA1 is thus an excellent choice for applications where cost, efficiency, and reliability are a priority.

The SGP02N60XKSA1 is a single channel IGBT, with a very low on-state voltage drop and low gate drive requirements. The on-state voltage drop, or the voltage between the collector and emitter of the IGBT when it is in the active region and conducting current, is only 2.3V. This low on-state voltage drop means that the device will dissipate less power than other devices with similar ratings. The low gate drive requirement of 5V - 10V means that the device can be operated with any common voltage supply. This makes the device flexible enough for use in different applications.

The SGP02N60XKSA1 has a high frequency switching capability, with a switching frequency of up to 100kHz. This high frequency switching allows for faster than average switch time, which is ideal for applications that need a fast response time without sacrificing control accuracy. The IGBT also offers a high blocking voltage of 600V, which allows for higher power switching capabilities. Additionally, it has a Collector-Emitter Saturation Voltage (VCE(sat)) of only 2.3V, which is excellent for controlling power in high-power switching applications.

The SGP02N60XKSA1 can be used in a variety of applications, including light dimmers, motor controllers, UPS and inverters, power supplies, and other high frequency PWM switching applications. Due to its low gate charge and low switching loss, as well as its excellent thermal characteristics, the device is ideal for applications that require high power, low gate charge, fast switching speeds, and reliability. The SGP02N60XKSA1 is thus an excellent choice for applications that need a cost-effective, efficient, and reliable IGBT solution.

The specific data is subject to PDF, and the above content is for reference

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