Allicdata Part #: | SGP07N120XKSA1-ND |
Manufacturer Part#: |
SGP07N120XKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 16.5A 125W TO220 |
More Detail: | IGBT NPT 1200V 16.5A 125W Through Hole PG-TO220-3 |
DataSheet: | SGP07N120XKSA1 Datasheet/PDF |
Quantity: | 431 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 16.5A |
Current - Collector Pulsed (Icm): | 27A |
Vce(on) (Max) @ Vge, Ic: | 3.6V @ 15V, 8A |
Power - Max: | 125W |
Switching Energy: | 1mJ |
Input Type: | Standard |
Gate Charge: | 70nC |
Td (on/off) @ 25°C: | 27ns/440ns |
Test Condition: | 800V, 8A, 47 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3 |
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。IGBTs, which stands for Insulated Gate Bipolar Transistors, are power semiconductor devices that benefit from both properties of bipolar and MOSFET transistors. They are widely utilized in motor drives, frequency converters, UPS systems, solar and grid energy applications, home appliances, and more. The SGP07N120XKSA1 is a popular IGBT model, and it offers many advantages that make it applicable to a wide range of applications.
The SGP07N120XKSA1 IGBT module is a 30 Amp IGBT with a package power dissipation of 18W, a drain to source voltage of 1200V, and a gate threshold voltage of 1.8V. It has an operating junction temperature range of -55°C to 150°C. This IGBT also features an optimized reverse conducting body diode with low leakage current, low forward voltage drop and high dV/dt immunity, enabling it to handle high frequencies with high reliability. It also has a very low switching loss, enabling it to achieve greater efficiency and power ratings. The SGP07N120XKSA1 is suitable for high power switching applications and drives requiring high frequency switching at high voltages and high temperatures.
The working principle of an IGBT is similar to that of MOSFET. When voltage is applied to the gate terminal, it removes the insulation between the gate and the emitter. This, in turn, lowers the resistance between the emitter and the collector, allowing current to flow. The IGBT is designed to be able to handle more power than a MOSFET because it is able to handle higher voltages and currents. It is also able to switch at higher frequencies than a MOSFET and store more charge when it is in the OFF state.
The SGP07N120XKSA1 is widely used in many industrial applications, such as AC and DC motor drives, home appliances, solar energy, grid energy and more. It is also widely used in high power switching applications and drive circuits requiring high frequency switching at high voltages. Additionally, because of its low switching loss and temperature range, the SGP07N120XKSA1 is also appropriate for pulse-width modulation circuits, DC motor control, and high-frequency inverters.
In conclusion, the SGP07N120XKSA1 is a popular IGBT module that offers many advantages. Its optimized dV/dt immunity, reverse conducting body diode, and low switching loss make it suitable for a wide range of applications, such as AC and DC motor drives, home appliances, solar energy, grid energy and more. Its temperature range and gate threshold voltage make it suitable for high power switching applications, particularly pulse-width modulation circuits, DC motor control, and high-frequency inverters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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