SGS5N150UFTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SGS5N150UFTU is an insulated gate bipolar transitors (IGBTs) stands out among the many options in IGBT transistors. It is a single IGBT transistor and is part of STMicroelectronics\' Triac range. It is optimized for use in applications such as induction cooking, air conditioners, power inverters, and condenser fan motors.

As one of the most efficient and popular insulated gate bipolar transistor devices, the SGS5N150UFTU contains several important and useful features. With an isolated current of 150A, the device has a maximum junction temperature of 25°C and a rated current of 100A.

In addition to its impressive current capability, the SGS5N150UFTU also offers several advantages that make it stand out in the IGBT market. Its conduction loss is very low at high temperatures, making it an efficient option for switching applications. Furthermore, the device\'s on-state voltage is extremely low, which makes it ideal for applications that require a low on resistance. Additionally, the SGS5N150UFTU has a fast switching time and short circuit capability, which makes it perfect for applications that require rapid switching times.

The SGS5N150UFTU IGBT also offers a higher current density with its unique construction. With its spiral copper copper copper spacing, this IGBT ensures smooth current transfer and short transit time. Additionally, its under gate electrode structure allows for higher current density, which is an important feature for power semiconductor applications.

The SGS5N150UFTU works on the principle of the insulated gate bipolar transistor structure. This type of device is characterized by a p-type substrate with a buried layer to form a dielectric. It is then provided with a top gate and a lower substrate. An oxide-nitride-oxide (ONO) passivation layer may be used to reduce electrical leakage between adjacent elements.

As a result of this structure, current flow through the device is regulated by controlling the voltage applied to the gate. When the voltage on the gate is above a certain threshold, the device allows electrons to pass through, while blocking current when the gate voltage is below the threshold. This ability to regulate current flow makes this type of transistor structure ideal for applications such as power control and signal switching.

The SGS5N150UFTU is one of the best solutions for power applications that require an efficient and fast switching time. With its unique construction, low on resistance, and high current density, this device is ideal for applications such as induction cooking, air conditioners, power inverters, and condenser fan motors.

The specific data is subject to PDF, and the above content is for reference