SGS5N60RUFDTU

Power - Max:	35W
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	55ns
Test Condition:	300V, 5A, 40 Ohm, 15V
Td (on/off) @ 25°C:	13ns/34ns
Gate Charge:	16nC
Input Type:	Standard
Switching Energy:	88µJ (on), 107µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 5A
Current - Collector Pulsed (Icm):	15A
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Application field and Working Principle of SGS5N60RUFDTU IGBT

IGBT devices are popular as a modern power switch due to their high efficiency and speedy switching capability. This devices commonly used in power supplies, motor drives, switchgear and AC/DC converters. SGS5N60RUFDTU is a high speed IGBT which combines the characteristics of a MOSFET and a BJT transistor. It is suitable for applications where high power and speed is of importance.

Construction

Looking at the internals of the SGS5N60RUFDTU, it can be found that the IGBT are constructed from a pair of p-type and n-type doped materials which are combined together to form a PN structure. Due to this, an electric field is generated within the IGBT which helps turn on and off the device. Additionally, this device also contains gate dielectric layer, a gate metallization, a drain metallization and a source metallization.

Operation

The unique feature of the SGS5N60RUFDTU IGBT is that it is a fast switching device. Thegate control signal turns the device on or off in a short amount T of time even at very highcurrents. This is due to the large number of electrons present in its channel. When a positive signal is given to the gate, electrons are drawn in and are attracted to the p-type material, thus forming a current path through the device. This is called the forward-bias condition by which electrons are allowed to flow through the device and help in the conduction of electricity.However, when the signal becomes negative, the current ceases, and the electrons are driven away from the p-type material. This condition is called the reverse bias, and no current flows through the device. The IGBT can also be triggered by voltage, where by increasing the voltage at the gate, allows more electrons to be drawn into the device, thus increasing the amount of current flowing through it. This method is also used to adjust the amount of current being conducted.

Advantages

The SGS5N60RUFDTU is a high-speed device with low ohmic losses. It has high switching frequencies, allowing it to be used in high-speed, high-power applications. Moreover, it has a low switching voltage, allowing it to be used in low-voltage applications. Additionally, due to its large number of electrons, it can handle large currents which are not possible for conventional MOSFET or BJT transistors. Furthermore, this device can also be triggered through voltage, thus eliminating the need for special gate drivers.

Applications

Due to its unique design and high-speed switching capability, the SGS5N60RUFDTU is suitable for a wide variety of power switching applications and processes. It can be used in power supplies, motor drives, switchgear and AC/DC converters. Examples include variable frequency drives, converters, power regulation, electric vehicles, Uninterrupted Power Supplies (UPS), voltage regulators and solar inverters.

Conclusion

The SGS5N60RUFDTU is a fast switching, single IGBT which combines the characteristics of two transistors, a MOSFET and a BJT. Due to its high-speed switching, low ohmic losses and voltage triggering capabilities, it is suitable for power switching applications and processes in a wide range of systems and devices.

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