SGSD200 Allicdata Electronics
Allicdata Part #:

497-7422-5-ND

Manufacturer Part#:

SGSD200

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS PNP DARL 80V 25A TO-247
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 25A ...
DataSheet: SGSD200 datasheetSGSD200 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
Power - Max: 130W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Description

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The SGSD200 is a single bipolar junction transistor (BJT) designed for various AC and DC controllable and switchable applications. It is well suited for use in a variety of power conditioning equipment such as motor controls, switching power supplies, and telecommunication systems. It has a high temperature rating of 175°C. An operating temperature range from -55°C to 150°C is also available.

The circuit diagram of the SGSD200 is shown below. It consists of four components: a collector, an emitter, a base, and a gate. The collector, emitter, and base are all connected together and form the BJT. The base terminal is used to control the current flow through the Transistor. The gate is a voltage-controlled switch that is used to turn the transistor on and off. The voltage applied to the gate controls the current between the collector and emitter.

The working principle of the SGSD200 is based on the basic operation of a bipolar junction transistor. When a voltage is applied to the base terminal, current flows from the collector to the emitter. This current flow between the collector and emitter is then modulated by the applied gate voltage. When the gate voltage is low, the current between the collector and emitter is low, and the transistor is said to be in the “off” state. When the gate voltage is increased, the current between the collector and the emitter increases and the transistor is said to be in the “on” state.

The SGSD200 is a versatile component and can be used in a variety of applications. It can be used as a switching device, an amplifier, or as a voltage regulator. It is also used in switching power supplies, power amplifiers, and motor controls. The SGSD200 is suitable for high-speed switching applications due to its small size, high breakdown voltage, and excellent switching performance.

The SGSD200 is an ideal component for applications that require a cost-effective and reliable solution. It is a low-cost component that can operate at high temperatures and is suitable for use in demanding environments. It is also a reliable component as it is designed with robust packaging and has a long lifespan. The SGSD200 is also compatible with a variety of other components and can be used in DC and AC power systems.

The SGSD200 is a single bipolar junction transistor that is ideal for many applications that require a reliable and cost-effective solution. It is capable of operating at high temperatures, is highly reliable, and is compatible with a variety of other components. It is an excellent choice for applications that require a reliable and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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