SGW23N60UFDTM Discrete Semiconductor Products |
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Allicdata Part #: | SGW23N60UFDTM-ND |
Manufacturer Part#: |
SGW23N60UFDTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 23A 100W D2PAK |
More Detail: | IGBT 600V 23A 100W Surface Mount D²PAK |
DataSheet: | SGW23N60UFDTM Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 115µJ (on), 135µJ (off) |
Base Part Number: | SG*23N60 |
Supplier Device Package: | D²PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 60ns |
Test Condition: | 300V, 12A, 23 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/60ns |
Gate Charge: | 49nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 100W |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 12A |
Current - Collector Pulsed (Icm): | 92A |
Current - Collector (Ic) (Max): | 23A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs (Insulated Gate Bipolar Transistors) are transistors used in electronic switching applications, mainly due to their low power consumption, high efficiency and high-voltage capability. The SGW23N60UFDTM is an IGBT device efficiently combining the merits of both MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and bipolar transistors. This device is specifically adapted for use in the field of high-voltage and high-power engineering.
The SGW23N60UFDTM is most commonly used as a power conversion device, and its power range can reach up to high voltages of 600 V/2.2 μH with a maximum of 300 A source-drain current. It also features low collector-emitter saturation voltage of 2 V, a low on-state resistance of 4.9 mΩ and a low driving voltage of 8 V, making it an ideal choice for high-power applications.
The SGW23N60UFDTM is a single-channel IGBT device. This type of device contains a single gate semiconductor layer between the collector and the emitter. This generates a current that can be controlled by a single voltage applied to the gate-source terminal, allowing the device to be used as a switch. When the gate voltage is raised above a certain threshold, the device will turn on, allowing current flow between the collector and the emitter. When the gate voltage is lowered, the current flow will cease and the device will turn off. This makes the SGW23N60UFDTM an ideal choice for high-power, high-precision switching applications.
The SGW23N60UFDTM also features an innovative, rugged construction. It has a robust all-silicon construction, which offers excellent thermal properties, high-frequency performance, and a long lifetime. The device also has a high energy efficiency, which makes it ideal for use in energy-sensitive applications. In addition, its unique design makes the SGW23N60UFDTM suitable for a wide range of applications, including inverters, motor drives, power supplies and motor control.
The SGW23N60UFDTM is most commonly used in motor control applications, because of its high voltage and power capabilities. As a motor controller, the device is used to control the flow of current to the motor. This can be used to regulate the speed and torque of the motor, as well as its position. The SGW23N60UFDTM can be programmed to respond to different signals and can be easily adjusted for different conditions.
The SGW23N60UFDTM is also used in power supplies and inverters, as it offers a wide range of switching and control capabilities. Its low on-state resistance makes it ideal for power supplies, and its low driving voltage allows it to be easily used in inverters. The device is also used in solar and alternative energy systems, as it has a high-frequency performance and can be easily adapted for different applications.
In conclusion, the SGW23N60UFDTM is ideally suited for a wide range of applications in the field of high-voltage and high-power engineering. Its rugged construction and innovative design make it an ideal choice for motor control, power supply and inverter applications. The device also has a wide range of switching and control capabilities, making it a versatile and reliable choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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