SGW25N120FKSA1

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The SGW25N120FKSA1 is a high-voltage insulated-gate bipolar transistor (IGBT) with NPT technology. It is a single device, specific to IGBTs. This device is produced with advanced STripDMOS technology, developed in cooperation with ST\'s MOSFETs. In addition, its design allows for a low gate charge and high avalanche energy strength.

This SGW25N120FKSA1 device has a three terminal structure for its multiple applications, specifically for use in converters, inverters, switches, free wheeling diodes, motor drives and other power control circuits. It features an Avalanche Rugged Technology that allows for an easy to drive and robust structure.

Overall, it is an excellent choice for the implementation of most power switching applications. It provides a higher current capacity, a lower RDS(on) characteristic, and more compact ground terminals for flexibility.

Application Field and Working Principle

The SGW25N120FKSA1 IGBT was designed for use in various applications, including switching power converters, as well as various motor control applications, such as speed and torque control, DC/AC inverters, pulse width modulation, etc.

The SGW25N120FKSA1 IGBT is composed of an insulated gate and a bipolar junction transistor (BJT). The insulated gate is used as a control voltage for the BJT, and is used to control the on/off state of the device. When a positive voltage is applied to the gate, it will cause a low resistance path, allowing the electrons to flow. When the voltage is removed, the path is interrupted and the device is turned off. The SGW25N120FKSA1 IGBT can be turned on and off faster than other types of switching components.

The rated voltage of the SGW25N120FKSA1 IGBT is 12V DC and it also has a reverse recovery time of 70ns. In addition, the device has a maximum avalanche energy of 3100mJ, a breakdown voltage of 1800V, and a current rating of 25A. The device also has a low gate charge for more flexibility and power switching performance.

The SGW25N120FKSA1 IGBT has the added benefit of a built-in heat sink that helps dissipate heat from the device at a higher rate than conventional switches. This helps prolong the life of the device and reduce the risk of failure due to overheating. The built-in heat sink also reduces the need for additional cooling systems, making the device more efficient and cost-effective.

The SGW25N120FKSA1 IGBT also features built-in protection circuits to ensure the device\'s safe operation. These circuits include: a thermal cut-off, self-reset circuit, soft start protection, and over-temperature protection. These protection circuits reduce the likelihood of device failure due to over-current, over-voltage, or over-temperature conditions.

Overall, the SGW25N120FKSA1 IGBT is an excellent choice in various industrial and commercial applications. It offers superior performance, with an impressive maximum current rating of 25A, a low gate charge, and a built-in heat sink. It also features built-in protection circuits to ensure safe operation, making it a reliable and cost-effective solution to power switching applications.

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