SGW50N60HSFKSA1

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Transistors - IGBTs - Single

The SGW50N60HSFKSA1 is a next-generation, state-of-the-art IGBT (Insulated Gate Bipolar Transistor) that is capable of up to 900 Amps of continuous output current. It is suitable for a variety of applications which require high-power, high-efficiency switching, including motor drives, power conversion, welding, uninterruptible power supplies, lighting, and high-voltage DC power distribution.

The SGW50N60HSFKSA1 utilizes the latest emerging IGBT technology, which combines low gate charge with improved forward voltage drop, and fast turn-off for high-efficiency operation in space-critical applications. This device is based on a FracPow architecture, which is a high-speed process technology that enables improved performance, comparable to the high-end spacked-gate process technology but at a lower cost. The device features a low saturation voltage and high-current capability, making it suitable for high-power switching applications.

The SGW50N60HSFKSA1\'s next-generation insulation and substrate technology increase thermal efficiency and reduce power losses, making it suitable for high-power applications, in addition to its cost-effectiveness. The device also features improved avalanche energy capability, a soft switching capability, as well as an improved common-mode transient immunity.

This device utilizes the fundamental IGBT working principle, which combines the low-voltage capability of a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) with the high-current capability of a bipolar transistor, resulting in superb switching and higher drive capability, while involving lower power losses.

The SGW50N60HSFKSA1 utilizes a process technology which combines the low-voltage drive capability of a MOSFET with the high current capability of a bipolar transistor. This allows the device to provide high power performance in a wide variety of applications such as motor drives, power conversion, welding, uninterruptible power supplies and lighting, at a high efficiency.

The principle of an IGBT works in a way that enables it to turn-on and turn-off fast, requiring only the gate voltage pulse of a few microseconds for activation. To turn off the device, the gate voltage must be removed and the internal body-diode must carry the load current to maintain the circuit. The device also features improved avalanche energy capability, a soft switching capability, as well as improved common-mode transient immunity.

The IGBT technology found in the SGW50N60HSFKSA1 allows it to achieve a significant power density, along with excellent thermal efficiency. Its low on-state and switching losses means the device helps to save power in many applications, which helps reduce electrical system cost and power losses. Additionally, the device is highly reliable, thanks to its high-temperature operation and its ability to meet or exceed industry-standard switching performance specifications.

In conclusion, the SGW50N60HSFKSA1 is an impressive custom-designed IGBT that brings together a variety of features such as high-current capability, fast turn-off, low-voltage drive capability, low saturation voltage, improved avalanche energy capability, improved common mode transient immunity, low gate charge and excellent thermal efficiency. These features make this device a suitable companion for a wide range of applications which require high-power, high-efficiency switching.

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