SGW5N60RUFDTM

Power - Max:	60W
Supplier Device Package:	D²PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	--
Reverse Recovery Time (trr):	55ns
Test Condition:	300V, 5A, 40 Ohm, 15V
Td (on/off) @ 25°C:	13ns/34ns
Gate Charge:	16nC
Input Type:	Standard
Switching Energy:	88µJ (on), 107µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 5A
Current - Collector Pulsed (Icm):	15A
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction:
The SGW5N60RUFDTM (SGW5n60RUFDTM) is a new series of silicon n-channel insulated gate bipolar transistors (IGBTs) developed for power electronics applications and manufactured by Panasonic. It is part of a new series of IGBTs that offers the high performance and power density needed for power electronics designs. This article will discuss the application field and working principle of SGW5N60RUFDTM.
Application
The SGW5N60RUFDTM has a wide variety of applications, including in power supplies, converters, motor drives, and other applications. The SGW5N60RUFDTM can also be used in high-frequency switching circuits and can withstand high-voltage spikes. Additionally, it features an integrated bootstrap Schottky diode, which allows it to operate efficiently, even without external power components. In addition, the SGW5N60RUFDTM has superior thermal characteristics, making it suitable for use in high-temperature environments.
Working Principle
The SGW5N60RUFDTM is a type of insulated gate bipolar transistor (IGBT) that is designed to switch electrical signals. It is constructed from n-channel silicon and uses insulated gate electrodes to switch current between two emitters. Unlike a conventional transistor, the gate electrode is insulated from the base region. This allows the gate electrode to be used to control the bias current of the device, thereby allowing it to control the switching of the device. The SGW5N60RUFDTM is designed to have a high voltage breakdown rating, making it suitable for use in high-voltage applications. Additionally, the device can be used in a wide variety of voltages, from 12V up to 1000V.
Advantages
The SGW5N60RUFDTM offers a number of advantages over other IGBTs. It is designed to handle a wide voltage range, making it suitable for use in a variety of electronic design applications. Additionally, it is designed with a bootstrap Schottky diode integrated into the device, allowing it to operate efficiently without the need for external power components. The device also features superior thermal characteristics which make it suitable for use in high-temperature environments. Furthermore, the device features a high breakdown voltage rating, making it suitable for use in high-voltage applications.
Conclusion
The SGW5N60RUFDTM is a new series of n-channel silicon insulated gate bipolar transistor (IGBT) devices designed for use in power electronics applications. It features a high voltage breakdown rating, allows the use of a bootstrap Schottky diode, and is suitable for use in high-voltage and high-temperature environments. It is suitable for use in a wide variety of applications, including power supplies, converters, motor drives, and other applications. The SGW5N60RUFDTM provides an efficient and powerful solution for power electronics designs.

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