SI8233AB-C-IMR Allicdata Electronics
Allicdata Part #:

SI8233AB-C-IMR-ND

Manufacturer Part#:

SI8233AB-C-IMR

Price: $ 0.00
Product Category:

Isolators

Manufacturer: Silicon Labs
Short Description: DGTL ISO 2.5KV GATE DRIVER 14LGA
More Detail: 4A Gate Driver Capacitive Coupling 2500Vrms 2 Chan...
DataSheet: SI8233AB-C-IMR datasheetSI8233AB-C-IMR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Rise / Fall Time (Typ): 12ns, 12ns (Max)
Approvals: CQC, CSA, UR, VDE
Supplier Device Package: 14-LGA (5x5)
Package / Case: 14-VFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6.5 V ~ 24 V
Voltage - Forward (Vf) (Typ): --
Current - Peak Output: 4A
Current - Output High, Low: 2A, 4A
Series: Automotive, AEC-Q100
Pulse Width Distortion (Max): 5.6ns
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Voltage - Isolation: 2500Vrms
Number of Channels: 2
Technology: Capacitive Coupling
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI8233AB-C-IMR is an isolated gate driver designed for various electrical equipment, ranging from industrial machines such as pumps and motors, to medical equipment and home appliances. This device combines isolation, drive, and protection functions in a single package, allowing for reliable operation and excellent protection against over-voltage, short-circuit, or over-temperature conditions. The key features of the SI8233AB-C-IMR are its isolation voltage of 6kVrms, output current of 1.5A, low-quiescent current, and an integrated magnetic isolation structure which provides a high level of galvanic isolation between input and output. This device is well suited for applications where uninterrupted operations are required even under harsh conditions.

The SI8233AB-C-IMR works by using a transformer-coupled isolated gate drive to drive an insulated gate MOSFET or IGBT. The input is an AC voltage, typically in the range of 5-35VAC, which is then rectified and conditioned prior to driving the MOSFET or IGBT. The input is protected against over-voltage, short-circuit, and over-temperature conditions. The output is an isolated gate drive which can switch up to 1.5A of current with high-frequency operation. The output is also protected against over-voltage, short-circuit, and over-temperature conditions to ensure reliable operation.

The SI8233AB-C-IMR also features an integrated magnetic isolation structure, which provides a high level of galvanic isolation between input and output. This eliminates the risk of ground loops or interference between separate systems. It also helps to ensure that the system is immune to electrical noise, allowing for reliable operation in harsh environments. Additionally, the SI8233AB-C-IMR requires very low quiescent current, minimizing power consumption and extending system battery life.

Overall, the SI8233AB-C-IMR is an excellent choice for applications where reliable operation is critical, even in harsh environments. It features a robust design which provides superior protection against over-voltage, short-circuit, and over-temperature conditions. Its low quiescent current and integrated isolation structure also make it ideal for applications where power consumption and interference prevention are crucial. The SI8233AB-C-IMR is an excellent choice for a wide variety of applications, making it an ideal solution for demanding applications.

The specific data is subject to PDF, and the above content is for reference

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