SI8235AB-D-IS

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Isolators are gate drivers that offer protection to help fault isolation and maintain data transmission across two networks. Often this protection is essential where human safety is concerned, such as in the case of medical or hazardous machinery. The SI8235AB-D-IS isolator is specifically designed to ensure that data transmission takes place safely between two networks.

The SI8235AB-D-IS is a three channel isolator that provides 1500VRMS of common-mode transient immunity and 10MBit/s full-speed data transfer. It provides the ability to transfer high-speed communication signals over greater distances by using galvanic isolation to protect sensitive circuits from static charges, power surges, and other disruptive noise sources. The isolator is based on an open-drain design and includes two arrays of complementary N- and P-channel MOSFETs for effective voltage level shifting between input and output power domains.

The signal inputs are TTL compatible and designed to accept TTL input signal levels over the full operating temperature range of -40°C to +85°C. The gate driver features a low signal propagation delay of 40nS max which helps to maintain data integrity whileclocking high-speed signals up to 10MBit/s, with no data errors or signal distortion. The gate driver also has improved stability under repetitive overvoltage conditions, making it suitable for use in high-temperature, shock and vibration sensitive applications such as automotive.

The SI8235AB-D-IS can be used in many different applications, including automotive, process control, industrial automation, medical instrumentation, factory automation, power supplies, and consumer electronics. It is suitable for use in safety-critical circuits, as it can protect sensitive circuits from static charges, power surges, and other disruptive noise sources.

The SI8235AB-D-IS is an ideal solution for anyone who needs reliable and safe data transmission over a distance. It has excellent common-mode transient immunity and low propagation delay, allowing for data transmission up to 10MBit/s without any distortion or data errors. Additionally, its open-drain design, combined with N- and P-channel MOSFETs, make it suitable for use in a wide variety of applications.

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