| Allicdata Part #: | 336-4265-ND |
| Manufacturer Part#: |
SI8233BB-D-IM1 |
| Price: | $ 1.72 |
| Product Category: | Isolators |
| Manufacturer: | Silicon Labs |
| Short Description: | ISOLATED GATE DRIVER |
| More Detail: | 4A Gate Driver Capacitive Coupling 2500Vrms 2 Chan... |
| DataSheet: | SI8233BB-D-IM1 Datasheet/PDF |
| Quantity: | 100 |
| 1 +: | $ 1.56240 |
| 25 +: | $ 1.50293 |
| 100 +: | $ 1.44516 |
| 1000 +: | $ 1.29565 |
| Rise / Fall Time (Typ): | 12ns, 12ns |
| Approvals: | CQC, CSA, UR, VDE |
| Package / Case: | 14-VDFN |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C |
| Voltage - Supply: | 6.5 V ~ 24 V |
| Voltage - Forward (Vf) (Typ): | -- |
| Current - Peak Output: | 4A |
| Current - Output High, Low: | 2A, 4A |
| Series: | Automotive, AEC-Q100 |
| Pulse Width Distortion (Max): | 5.6ns |
| Propagation Delay tpLH / tpHL (Max): | 60ns, 60ns |
| Common Mode Transient Immunity (Min): | 45kV/µs |
| Voltage - Isolation: | 2500Vrms |
| Number of Channels: | 2 |
| Technology: | Capacitive Coupling |
| Part Status: | Active |
| Packaging: | Tube |
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Isolators are electrical devices used to ensure the integrity of a signal between two circuits with different ground potentials or facilitate bidirectional communication between two pieces of equipment. Gate drivers are used to control the gate of a power device such as an insulated gate bipolar transistor (IGBT) or a metal oxide semiconductor field-effect transistor (MOSFET). SI8233BB-D-IM1 is an example of an isolator-gate driver package that provides bidirectional and isolated signal transmission.
The SI8233BB-D-IM1 is an optically isolated, bi-directional gate driver package. It combines a high speed photo− transistor opto-isolator, and a half-bridge driver circuit into a 16−lead surface mount package. The device includes a high speed integrated photo−transistor coupled to a low power drive output stage for driving power transistors. The driver is configured to drive bipolar transistors, MOSFETs, or IGBTs in its half-bridge configuration. It has robust output protection (over-voltage, over-current, and short−circuit protection) and is rated from −40℃ to +85℃.
When the gate input of this device is high, the half-bridge outputs are inverted controlled by an internal driver stage. When the gate signal is low, the outputs are held in a low-current state. The SI8333BB-D-IM1 contains a fast lock-out circuit to ensure that the driver will remain off if an input signal is absent or faulty. The driver also includes thermal shutdown circuitry to prevent excessive current buildup and damage to the device.
The SI8233BB-D-IM1 can be used in a number of applications, such as motor control systems, motor drives, motor controls, HVAC controls, appliances, automotive systems, and industrial process controls. It is designed to drive both N-channel MOSFETs and P-channel MOSFETs.The two half-bridge drivers can each drive a power device (such as an IGBT or MOSFET) up to 25A peak and support logic levels between 3.3V and 5V. The integrated photo-transistor provides isolation exceeding 2.5kV, and the driver input signals can be routed via the opto-isolator for signal conditioning, level shifting, and EMI suppression.
The SI8233BB-D-IM1 isolator-gate driver package has a number of features that make it advantageous in a variety of applications. It is designed using a modular structure, allowing users to easily customize their system design and configure the device for their specific application. Additionally, the device can be easily integrated into existing circuitry, providing system designers with a fast, easy, and cost-effective solution. Finally, it has robust output protection and is rated for operation between -40℃ and +85℃, making it suitable for use in a wide range of temperatures, motion control systems, and industrial automation systems.
The specific data is subject to PDF, and the above content is for reference
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SI8233BB-D-IM1 Datasheet/PDF