SI82391AB-IS1R

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The SI82391AB-IS1R is a gate driver isolator designed for digital power applications, acting as an integrated gateway between high side gate driver circuits and low side gate driver circuits. It works by electrically isolating two separate circuits while still allowing current to flow between them. The SI82391AB-IS1R is an ideal solution for applications where Digital Power Modules (DPMs) are powered from regulated sources, such as an isolated DC/DC converter, and low-side MOSFETs need to be commanded for pulse-width modulation (PWM) control.

The SI82391AB-IS1R is specifically designed to provide reliable and low-emittance isolation between an integrated high-side MOSFET driver and a low-side MOSFET driver. It works by providing two-way communication between the systems, while maintaining a barrier between them. The gate-drive isolator draws a constant supply from the input side and delivers a steady output into the load that is electrically isolated from the input. The constant supply helps provide consistent and uninterrupted functionality, while the isolated output allows the system to communicate with the load without any risk of circuit interference.

The device utilizes a serial data bus (I2C) and a low-voltage differential signaling (LVDS) interface for digital signal isolation and input/output communication between the high-side and low-side gate drivers. On the input side, the SI82391AB-IS1R receives a logic signal from a digital signal processor, microcontroller, or field programmable gate array (FPGA) and is capable of translating that signal into low-level push-pull or low-side open-drain based output signals to the low-side MOSFET driver. On the output side, the isolation barrier also allows the SI82391AB-IS1R to receive input from the low-side MOSFET driver in order to detect faults or errors in the switching operation.

This device is built using silicon on insulator (SOI) technology, allowing it to provide more insulation and much faster switching capabilities compared to traditional silicon-based solutions. It is designed to provide high-speed switching from the high-side to low-side with minimal propagation delay and skew losses. It features excellent thermal stability, a high operating temperature of 175°C, and EMI protections to help minimize noise and interference.

The SI82391AB-IS1R is an ideal solution for applications where low power data transmission and isolation security are required, such as digital power management. It provides high isolation performance, fast switching speeds, and low-level signal drive, making it suitable for controlling power conversion in a wide range of applications, such as motor drives, solar inverters, EV/HEV chargers, industrial automation, networking, lighting control, and telecom power systems.

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