SI8261BBC-C-IS Allicdata Electronics
Allicdata Part #:

SI8261BBC-C-IS-ND

Manufacturer Part#:

SI8261BBC-C-IS

Price: $ 0.00
Product Category:

Isolators

Manufacturer: Silicon Labs
Short Description: DGTL ISO 3.75KV GATE DRVR 8SOIC
More Detail: 4A Gate Driver Capacitive Coupling 3750Vrms 1 Chan...
DataSheet: SI8261BBC-C-IS datasheetSI8261BBC-C-IS Datasheet/PDF
Quantity: 1396
Stock 1396Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100
Packaging: Tube 
Part Status: Active
Technology: Capacitive Coupling
Number of Channels: 1
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 50ns
Pulse Width Distortion (Max): 28ns
Rise / Fall Time (Typ): 5.5ns, 8.5ns
Current - Output High, Low: 500mA, 1.2A
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 2.8V (Max)
Current - DC Forward (If) (Max): 30mA
Voltage - Supply: 9.4 V ~ 30 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Approvals: CQC, CSA, UR, VDE
Description

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The SI8261BBC-C-IS is an isolated gate driver designed to provide a high level of performance in an ultra-compact form factor. It has been designed to be used in a variety of applications ranging from power electronics to medical systems. The SI8261BBC-C-IS offers integrated high speed isolation and high side switching capability, allowing engineers to create a smaller yet robust solution for their application.

The SI8261BBC-C-IS isolator is a 3-channel design with integrated gate driver and single-channel opto-isolator. The gate driver provides a low-side gate drive current of up to 4A with 12µs switching time, while the opto-isolator provides an isolation voltage of 4 kVrms max. This allows the SI8261BBC-C-IS to be used for driving a variety of power semiconductors, including IGBTs, MOSFETs, and thyristors.

The driver is designed to be used with a power supply between 10V to 15V although it also features integrated overvoltage protection up to 24V. This allows for a wider range of applications where higher voltage levels are anticipated. In addition to the overvoltage protection, the driver also features a fast-diode protection circuit which allows it to quickly respond to transient overvoltage conditions.

The SI8261BBC-C-IS driver features a unique low-side floating capability which allows the user to configure the output pin for high or low side operation. This is accomplished by configuring the low side of the output with either a high or low signal. This allows the user to switch between either high or low side operation without the need to apply an external power supply.

The SI8261BBC-C-IS driver also incorporates several safety features such as over-current protection, over-temperature protection, and output short-circuit protection. These features, along with its outstanding EMC characteristics, make the SI8261BBC-C-IS the perfect choice for applications requiring high isolation, high reliability, and long-term stability.

The SI8261BBC-C-IS driver also makes use of an actively monitored PWN input which allows for soft start and stop operation. This feature can help prevent overshoot and undershoot of the output signal as well as prevent the driver from switching on during power up or power down. The active monitoring feature also allows for input slew rate optimization of the driver circuit, resulting in improved noise immunity and higher efficiency.

Overall, the SI8261BBC-C-IS is an excellent choice for high isolation and high performance in an ultra-compact form factor. Its integrated gate driver and opto-isolator provide a wide range of applications and its integrated safety features make it a robust and reliable solution. Its active monitoring feature allows it to respond quickly to transient overvoltage conditions and its versatile output configuration allows users to configure the device for high or low side operation.

The specific data is subject to PDF, and the above content is for reference

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