SI8261BCC-C-ISR

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Isolators - Gate Drivers

SI8261BCC-C-ISR is a type of gate driver isolated from the power switch and gate signal. It is suitable for driving isolated high-side and low-side MOSFETs in applications such as AC power switching, motor control, DC-DC conversion and high-current power applications. The SI8261BCC-C-ISR consumes very low power, can reduce current through the gate, has a wide operating voltage range, and can offer comprehensive protection features.

The SI8261BCC-C-ISR gate driver can provide up to a 2.5A gate drive current, operating from a supply voltage of 5V to 30V. Its MOSFET gate drive circuits allow independent and simultaneous control of high-side and low-side N-channel MOSFETs, making it perfectly suitable for half-bridge topology designs.

The gate driver has a wide input logic voltage range of 2.5V to 5.5V, and its high-side driver has an internal boot strap diode which allows single supply operation. This gate driver can be operated with a control voltage up to 20V, and the dead-time between the high and low-side is independently programmable and adjustable using the external components. It also has a comprehensive fault monitoring and protection features.

The working principle of SI8261BCC-C- ISR gate driver is based on a self-oscillation circuit with two voltage comparators and a reference voltage. The two voltage comparators compare the signal input with a reference voltage and when they are triggered, an output signal is generated. This output signal is used to control the high-side and low-side MOSFETs and the bootstrap high voltage is generated due to the self-oscillation circuit. The gate driver has an in-built circuitry that monitors the voltage across both the MOSFETs to ensure that the high-side and low-side devices are in perfect balance.

The SI8261BCC-C-ISR gate driver can be used in a wide range of applications including AC power switching, motor control, DC-DC conversion, automotive and other high-current power applications.

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