SI8273BBD-IS1

Rise / Fall Time (Typ):	10.5ns, 13.3ns
Approvals:	CQC, CSA, UR, VDE
Supplier Device Package:	16-SOIC
Package / Case:	16-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C
Voltage - Supply:	9.6 V ~ 30 V
Voltage - Forward (Vf) (Typ):	--
Current - Peak Output:	4A
Current - Output High, Low:	1.8A, 4A
Series:	Automotive, AEC-Q100
Pulse Width Distortion (Max):	8ns
Propagation Delay tpLH / tpHL (Max):	60ns, 60ns
Common Mode Transient Immunity (Min):	150kV/µs
Voltage - Isolation:	2500Vrms
Number of Channels:	2
Technology:	Capacitive Coupling
Part Status:	Active
Packaging:	Tube

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The SI8273BBD-IS1 is a high-frequency compound isolator with gate driver for symmetrical communications. It is part of the Isolators - Gate Drivers family and is commonly used in industrial and telecom applications. The SI8273BBD-IS1 is designed to provide efficient single- or multiple-bus isolation between AC and DC circuits, ensuring safe and reliable data transmission.The SI8273BBD-IS1 is based on a single-ended input and dual-gain output architecture which eliminates the need for two separate signal paths in multi-bus applications. Its high-current driver operates in double-frequency mode to achieve greater efficiency and improved signal quality. The device also features auto-shutdown mode and low on resistance to enhance device safety and power efficiency.The SI8273BBD-IS1 consists of two channels: the primary channel is a digital isolator that serves as a bridge between the isolated input and output paths. The secondary channel is a driver designed to drive the output circuit with high-current pulses to reduce power consumption and increase efficiency.The primary channel of the SI8273BBD-IS1 is a bipolar junction transistor-based isolator that allows for safe and reliable transmission of data signals. It provides an electrical path with low energy consumption and low noise generation. The high-frequency switching between the input and output paths utilizes integrated gate driver logic to eliminate EMI noise transfer between the circuit and the environment, while providing superior signal integrity.The secondary channel of the SI8273BBD-IS1 is an FET driver that provides high current pulses to drive the output circuit. The FET driver features low on-resistance, allowing for increased efficiency and higher power savings. The FET driver also supports auto-shutdown mode, which reduces overall power consumption and eliminates electrical noise and potential EMI problems.The SI8273BBD-IS1 is ideal for use in multiple application fields, such as industrial, telecom, automotive, and medical equipment. Its excellent isolation capability and high data rate make it a suitable choice in applications where data accuracy is critical, while its low power dissipation ensures reliable performance in a wide range of environments. The combination of low EMI, high data rate, and excellent isolation characteristics makes the SI8273BBD-IS1 an ideal solution for applications requiring high speed, high density, and low power consumption.

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