SIP32509DT-T1-GE3

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• Application Field
  • The SIP32509DT-T1-GE3 is a single-channel low on-resistance High and Low Side N-Channel MOSFET Driver that is designed to drive both N-Channel MOSFETs in a high side/low side configuration. This device is ideal for driving power MOSFETs or IGBTs in various applications such as motors, solenoids, relays, and LEDs.
  • The device operates from a single supply voltage ranging from +3V to 10V and is designed to switch up to a +25V load voltage. It features fast switching speeds, low power dissipation, and has very low on-resistance.
  • The SIP32509DT-T1-GE3 is an ideal solution for driving loads in industrial and automotive applications such as DC/DC converters, lighting ballasts, and motor controls.
• Working Principle
  • The SIP32509DT-T1-GE3 is a single-channel high and low side N-channel MOSFET driver. This device is designed to drive both N-channel MOSFETs in a high side/low side configuration.
  • The device is comprised of two gate driver circuits, each of which consists of an integrated N-channel MOSFET switch and an over-current protection circuit. The integrated MOSFET switches are designed to switch up to +25V and are controlled by digital inputs.
  • The over-current protection circuit is designed to prevent excessive current in the system by sensing the voltage across the N-channel MOSFET and shutting off the gate driver when the voltage exceeds a certain threshold.
  • The device also features
 programmable slew rate control, which enables the user to optimize the switching speed of the driver. The slew rate is adjustable from 0.5V/μs to 4V/μs, allowing for faster switching speeds and lower power dissipation.

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