Allicdata Part #: | SJPB-H4V-ND |
Manufacturer Part#: |
SJPB-H4V |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE SCHOTTKY 40V 2A SJP |
More Detail: | Diode Schottky 40V 2A Surface Mount SJP |
DataSheet: | SJPB-H4V Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.12470 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 200µA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, J-Lead |
Supplier Device Package: | SJP |
Operating Temperature - Junction: | -40°C ~ 150°C |
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SJPB-H4V, also known as surface mount fast recovery diodes, is a type of single diode widely used for power applications. These devices are designed to be fast recovery, low leakage and low forward voltage drop. SJPB-H4V diodes are characterized by their high power and fast switching time, making them suitable for line-regulated and switched-mode power supplies. In addition, they are commonly used in rectifier circuits and high-efficiency automotive applications.
The SJPB-H4V diodes are based on a monolithic technology that makes them faster and more reliable than other types of single diodes. The core of the device is a planar Silicon p-n junction that acts as the diode\'s rectifying element. The junction is surrounded by an oxide layer that prevents current leakage and increases the breakdown voltage. An additional planar metal oxide semiconductor is used to control current flow.
The device\'s metal oxide semiconductor is used for the purpose of increasing the power handling capability and improving the recovery time of the diode. When a voltage is applied across the metal oxide semiconductor, it generates a current flow. This current flow turns on the rectifying action of the diode. As the voltage rises, the current increases and the rectifying action becomes stronger.
Unlike other diodes, SJPB-H4V diodes are designed for high-frequency applications. When a suitable input voltage is applied, the diode can switch the current on and off in an extremely short time interval. At frequencies in excess of 30MHz, the time interval drops to less than 5ns. This high-frequency switching capability make them highly suitable for applications such as switching power supplies and DC-DC converters.
SJPB-H4V diodes can be used in a wide range of applications. They are often used as rectifiers in power supplies and isolated power supplies, voltage regulators, and in switches for high-frequency applications. They are also used for the control of DC-DC converters and as an environmental protection feature in mobile phones and MP3 players. These diodes are also well-suited for automotive use and can be used in applications such as lighting, thermal protection, and EMI suppression.
The SJPB-H4V diodes are a great choice for many power applications and their fast switching capabilities make them the preferred choice for high-frequency applications. Their low leakage and low forward voltage drop make them extremely efficient and their small size makes them easy to mount on printed circuit boards. They are also fast and reliable, making them a great choice for anyone looking for reliable power solutions.
The specific data is subject to PDF, and the above content is for reference
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