Allicdata Part #: | SK12BHM4G-ND |
Manufacturer Part#: |
SK12BHM4G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 20V 1A DO214AA |
More Detail: | Diode Schottky 20V 1A Surface Mount DO-214AA (SMB) |
DataSheet: | SK12BHM4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.05521 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 500mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 125°C |
Description
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SK12BHM4G is a single rectifier diode which belongs to the Schottky Barrier Rectifier family. It is designed for use in power applications requiring higher levels of efficiency, such as solar cells and LED lighting. This diode offers a wide range of advantages such as low forward voltage drop, low power dissipation, low switching times and high current.The SK12BHM4G is a single rectifier diode which has a reverse breakdown voltage of 60V and a maximum reverse current of 2A. This diode is capable of operating at temperatures up to 175° C. It has a low forward voltage drop of 0.24V and can handle peak forward currents up to 3A. Due to its low power dissipation, this diode is suitable for use in power applications requiring efficiency.Working PrincipleThe working principle of the SK12BHM4G is based on the Schottky Rectifier Effect. This effect is created when a metal – semiconductor interface is formed in a junction between two metals, such as between aluminum and silicon. When forward-biased, electrons become attracted to the metal on the other side of the junction. The electrons are then accelerated along a potential barrier and then reach the metal junction where an exchange of electric charge takes place, generating current.This diode also features a lowcurrent gate control capability which enables faster switching times than standard Schottky rectifiers. This is achieved by controlling the turn-on voltage of the device in order to suppress surge current. The main feature of this diode is its low forward voltage drop, which is significantly lower than standard silicon rectifiers.Application FieldThe application fields of the SK12BHM4G are vast, due to its low forward voltage drop and compact size. It can be used in a wide variety of applications including switching power supplies, battery chargers, smartphones, computers and other electronic devices. In addition, due to its low power dissipation, this diode is highly suitable for solar cells, LED lighting and other energy-saving circuits.The SK12BHM4G is an ideal choice for applications which require higher levels of efficiency and faster switching times. Its low forward voltage drop and low power dissipation make it a great option for applications where power consumption is of utmost importance. In addition, its compact size enables it to be used in small, space-saving applications. This diode is a perfect addition to any power system, offering superior performance and efficiency to its users.The specific data is subject to PDF, and the above content is for reference
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