SKP02N120XKSA1

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SKP02N120XKSA1 Application Field and Working Principle

The SKP02N120XKSA1 is a single IGBT (Insulated-Gate Bipolar Transistor) with a rated voltage of 1200V and a standard mounting 3-in-1 package made by ASEA Brown Boveri (ABB). It is mainly used in motor drives and power conversion systems, but can also be applied to other industrial power systems.

To understand how and why the SKP02N120XKSA1 can be used in motor drives and power conversion systems, it is helpful to know the functioning principle of an IGBT. An IGBT is a type of power semiconductor that integrates the properties of both a bipolar transistor, or BJT (Bipolar Junction Transistor), and a metal oxide field effect transistor, or MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It has low on-state voltage drop and achieves high-frequency and high-speed switching operation. This is due to the fact that the IGBT combines the advantages of NPN and PNP BJTs with those of the MOSFET by using a gate insulation layer as a base. As a result, the IGBT has a composite structure, consisting of a PNP collector, a NPN emitter, and an insulated MOS gate terminal.

In order to operate, the gate terminal is subjected to an electric field, driven by an external voltage source. When the magnetic field created by this voltage source is strong enough to pass through the gate insulation layer, it triggers an avalanche effect, ensuring that a current flows from the collector to the emitter. This is known as a “drain-source” conduction in the IGBT, where the “source” is the collector and the “drain” is the emitter. During conduction, the IGBT behaves like a switch and can control the power that is being used by the motor or other device.

The SKP02N120XKSA1 IGBT is compact in size, with a height of only 6.9mm x 10.3mm x 19.1mm. It has a low conduction loss of only 0.32mΩ at 25°C and can generate large currents at high speeds; making it an ideal transistor for applications used in motor drives and power conversion systems. It is also relatively economical when compared to other transistors and is capable of withstanding 5,000V ESD, providing high reliability in power circuits. In addition, its gate charge characteristics are quite favorable – making it well suited for use in high-speed switching applications.

In short, the SKP02N120XKSA1 IGBT is an excellent choice for motor drives and power conversion systems. Its compact size and low conductivity loss make it perfect for these kinds of applications, as well as its relatively low cost and reliable construction. Moreover, its gate charge characteristics make it an ideal choice for high-speed switching applications.

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