SKP04N60XKSA1 Allicdata Electronics
Allicdata Part #:

SKP04N60XKSA1-ND

Manufacturer Part#:

SKP04N60XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 9.4A 50W TO220-3
More Detail: IGBT NPT 600V 9.4A 50W Through Hole PG-TO220-3
DataSheet: SKP04N60XKSA1 datasheetSKP04N60XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 131µJ
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 180ns
Test Condition: 400V, 4A, 67 Ohm, 15V
Td (on/off) @ 25°C: 22ns/237ns
Gate Charge: 24nC
Input Type: Standard
Series: --
Power - Max: 50W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Current - Collector Pulsed (Icm): 19A
Current - Collector (Ic) (Max): 9.4A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Part Status: Obsolete
Packaging: Tube 
Description

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SKP04N60XKSA1 is an integrated circuit created by ROHM that belongs to the Transistors - IGBTs - Single category. This device is a 600V, 0.26Ω, N-channel Super Junction MOSFET which is ideal for high efficiency power conversions. This device is a TO-220ISP full-mold package with a 600V avalanche characteristic that is suitable for a wide range of applications.

The main application fields of this device are DC-DC and AC-DC converters, motor control, power factor correction, motor drives, and switching applications.

Such a device provides a variety of operating advantages, mainly power conversion efficiency and switching speed improvement. It also enables high frequency operation and significant reduction of line noise.

The working principle of this device is related to the structure of its internals. SKP04N60XKSA1 is a Super Junction MOSFET device, which means it has two devices in parallel: a MOSFET that acts as a low voltage switch and a junction FET that operates as the breakdown device for higher voltage applications.

The device is composed of two cells. Both cells are connected in series, each one having three terminals. The cells are connected in a way that the drain and source of each cell are connected to the gate of the other cell. This means that the MOSFET acts as both a switch and a breakdown device.

When the MOSFET is in the off-state, the gates of the two cells are at the same voltage. This voltage is the gate-source voltage and represents the threshold voltage of the Super Junction MOSFET. When a gate voltage higher than this threshold is applied, the breakdown will occur and the current flow through the device will be increased.

The application of a gate voltage lower than the threshold will cause a decrease in the current flow and the MOSFET will switch off. This two-state operation is what allows for precise control of the current flowing through the device.

The high efficiency of the SKP04N60XKSA1 is due to its low-on-state resistance and the reduction of power loss due to the internal MOSFET and short switching time. Additionally, the level of noise associated with the device is also reduced.

To summarize, SKP04N60XKSA1 is an integrated circuit that belongs to the Transistors - IGBTs - Single category. This device is a 600V, 0.26Ω, N-channel Super Junction MOSFET which is ideal for high efficiency power conversions. This device is mainly used in DC-DC and AC-DC converters, motor control, power factor correction, motor drives, and switching applications. The working principle of this device is based on the structure of its internals and its two-state operation which allows for precise control of the current flowing through the device.

The specific data is subject to PDF, and the above content is for reference

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