Allicdata Part #: | SKW30N60FKSA1-ND |
Manufacturer Part#: |
SKW30N60FKSA1 |
Price: | $ 3.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 41A 250W TO247-3 |
More Detail: | IGBT NPT 600V 41A 250W Through Hole PG-TO247-3 |
DataSheet: | SKW30N60FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
240 +: | $ 2.94426 |
Switching Energy: | 1.29mJ |
Base Part Number: | *KW30N60 |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 400ns |
Test Condition: | 400V, 30A, 11 Ohm, 15V |
Td (on/off) @ 25°C: | 44ns/291ns |
Gate Charge: | 140nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 112A |
Current - Collector (Ic) (Max): | 41A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SKW30N60FKSA1 is a high-voltage insulated gate bipolar transistor (IGBT) module designed for use in a range of power application fields, including motor control, lighting, UPS and solar energy. This IGBT module features low on-state voltage drop and is suitable for both unipolar and bipolar operation. It has a built-in soft recovery diode, making it ideal for use in high-frequency switching applications.
The SKW30N60FKSA1 is a single IGBT module comprised of a main IGBT chip, an optional resistor and an integrated athermal protection circuit. This IGBT module provides a low-power switching system with zero disturbance, thanks to its low input current, fast turn-off time and low stress current. It has a forward current rating of up to 150 A, a thermal resistance of 5.9 K/W, and a reverse recovery time of 10 µs.
The working principle behind the SKW30N60FKSA1 IGBT module is the operation of the insulated gate by applying an appropriate gate voltage. There are two states of operation: the cut-off state and the saturation state. In the cut-off state, the gate voltage is low, the IGBT\'s collector-emitter voltage is high, and the current flow is zero. In the saturation state, the gate voltage is high and the collector-emitter voltage is low, allowing a large current to flow between the collector and the emitter.
The SKW30N60FKSA1 IGBT module also features an integrated protection circuit which protects the IGBT against damage from overcurrent and over-temperature events. This integrated protection circuit is triggered when the device reaches a certain threshold in terms of current and temperature, and it shuts off the IGBT module for a short period of time before resetting it. This feature helps prevent damage to the IGBT module and ensures its longevity.
The SKW30N60FKSA1 IGBT module is an excellent choice for any power application, due to its high power capacity, low switching losses, fast switching speed and integrated protection circuit. It is suitable for a range of motor control, lighting, UPS and solar energy applications, providing reliable power switching in these applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SKW30N60FKSA1 | Infineon Tec... | 3.24 $ | 1000 | IGBT 600V 41A 250W TO247-... |
SKW30N60HSFKSA1 | Infineon Tec... | 0.0 $ | 1000 | IGBT 600V 41A 250W TO247-... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT