Allicdata Part #: | SKW30N60HSFKSA1-ND |
Manufacturer Part#: |
SKW30N60HSFKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 41A 250W TO247-3 |
More Detail: | IGBT NPT 600V 41A 250W Through Hole PG-TO247-3 |
DataSheet: | SKW30N60HSFKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Input Type: | Standard |
Base Part Number: | *KW30N60 |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 125ns |
Test Condition: | 400V, 30A, 11 Ohm, 15V |
Td (on/off) @ 25°C: | 20ns/250ns |
Gate Charge: | 141nC |
Series: | -- |
Switching Energy: | 1.15mJ |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 3.15V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 112A |
Current - Collector (Ic) (Max): | 41A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | NPT |
Part Status: | Obsolete |
Packaging: | Tube |
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The SKW30N60HSFKSA1 is a high power MOS-FET and is currently a commonly utilized device in many energy-related applications. It belongs to the family of transistors, particularly insulated gate bipolar transistors (IGBTs), and belongs to the single family.
The SKW30N60HSFKSA1 is a current sourced device offering average current capabilities up to 30 amps and peak pulsed current capabilities up to 82 amps. It is capable of a maximum operating temperature of 175° C and features a rated breakdown voltage of 900 V. All of these features make it particularly well suited for power switching, and driving inductive loads such as motors and solenoids, both with and without pulse width modulation (PWM) control.
The device works on the principle of facilitation of very low forward voltage drop and low ON-state resistance. It offers very small switching losses, which help reduce the amount of heat generated when switching. This helps to increase efficiency, as well as facilitates enhanced temperature control.
The SKW30N60HSFKSA1 is capable of working in both low-side and high-side configurations, making it versatile and applicable in a wide range of circuit designs. Being an MOS-FET based device, it is able to switch rapidly and over a wide range of input and output voltages.
The SKW30N60HSFKSA1 is an extremely efficient device and displays exceptional durability, particularly in relation to power applications. In addition, its low temperature operating temperature and low duty cycle requirements both contribute to its impressive efficiency. It is a cost-effective device that makes it particularly useful for applications where saving power is of critical importance.
The SKW30N60HSFKSA1 has a wide range of applications, with its versatility allowing it to be used in a variety of power switching applications. These include lighting applications – such as automotive, industrial and general-purpose lighting – as well as drive applications like those involving motors and solenoids. It is also a viable choice for solar and automotive applications, with its extreme efficiency being a major advantage in these areas.
The SKW30N60HSFKSA1 is a powerful, versatile and cost-effective device, making it well suited for a variety of power switching applications. Its low forward voltage drop, low on-state resistance and high operating temperature all contribute to its exceptional efficiency and durability, making it an excellent choice for power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SKW30N60FKSA1 | Infineon Tec... | 3.24 $ | 1000 | IGBT 600V 41A 250W TO247-... |
SKW30N60HSFKSA1 | Infineon Tec... | 0.0 $ | 1000 | IGBT 600V 41A 250W TO247-... |
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