SM5819L2-TP Allicdata Electronics
Allicdata Part #:

SM5819L2-TPMSTR-ND

Manufacturer Part#:

SM5819L2-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE SCHOTTKY 40V 1A DFN1006-2
More Detail: Diode Schottky 40V 1A Surface Mount DFN1006-2
DataSheet: SM5819L2-TP datasheetSM5819L2-TP Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03175
30000 +: $ 0.02977
50000 +: $ 0.02646
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 60µA @ 40V
Capacitance @ Vr, F: 90pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UDFN
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The SM5819L2-TP is a Rectifiers - Single device designed for consumer, communication and industrial system applications. It is a dual-die, monolithic rectifier integrated circuit used to provide positive and negative linear regulation of the input voltage.The SM5819L2-TP die employs a symmetric dual barrier layer on both surfaces to reduce forward voltage drop. This symmetric dual barrier layer also provides isolation from parasitic capacitance, allowing high switching frequency and increased input headroom. The electrostatically doped surface allows for very low on-resistance, reducing power loss and enabling high power efficiency.The SM5819L2-TP is a fast-recovery diodes that provides a highly reliable rectification solution with fast response time. The device can be used in applications where a long life rectification circuit is required. The monolithic design makes the device well suited for applications where heat dissipation is critical. It has a maximum voltage rating of 100V and can operate reliably with up to 20V of input voltage margin.The rectification process of the SM5819L2-TP is achieved by the injection of electrons and holes into the n-type semiconductor substrate, forming a series of equally spaced energy bands that act as rectifying layers. This provides an efficient process in which two current-carrying regions, the inversion layer and the depletion region, are formed between the two opposite contacts of the device, forming a rectifying junction.The SM5819L2-TP device is capable of achieving high efficiency rectification at low voltages with a maximum forward current of 18A and a maximum reverse current of 3mA. The device has a very low reverse recovery time of <200nS, which allows it to be used in applications where fast switching time is important.The SM5819L2-TP is capable of operating at temperatures up to 150°C and is compatible with standard surface mount assembly processes. It is a low-cost, high-performance device, which is easily incorporated into any application.In summary, the SM5819L2-TP is an excellent rectifier that is suitable for applications that require high efficiency and low voltage operation. It provides fast switching time, high current capability and a low forward voltage drop, making it ideal for use with low-power, low-noise systems. The device’s monolithic design makes it well suited for efficient heat dissipation and its compatibility with standard surface mount assembly processes makes it a cost-effective solution for applications requiring reliable rectification.

The specific data is subject to PDF, and the above content is for reference

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