SM6T36AHE3/52

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Within the field of protection components, TVS (Transient Voltage Suppressors) - diodes are a crucial component in providing circuit protection against ESD (electrostatic discharge), voltage transient surges, as well as protecting equipment from electrical overstress (EOS) or power cross-conditions. The SM6T36AHE3/52 component found within the Vishay “SMAJ” series is one such variety of TVS-diode.

Package & Design

This component is housed within the SMB package body, and its shape allows it to be mounted easily in tight spaces. It’s also designed with a diagonal cut, allowing for thermal relief after periods of extended strain or exposure. With its two major terminals, this component can withstand 6 Watts peak pulse power (8/20µs). It is usually connected between the power and ground of the circuit, and is configured in a line-to-line configuration to protect two lines within the circuit.

Characteristics

From a electrical characteristics standpoint, the nominal current rating is normally up to 36Amps. Its breakdown voltage is often 52V but may vary depending on the product configuration. Additionally, it’s working capacitance is usually at 190pF, but can also reach 275pF depending on the configuration. Analyses of the typical voltage distribution also shows that the total peak-to-peak capacitance is usually 2.3V.

Applications

The SM6T36AHE3/52 component is mainly used in automotive, consumer, industrial and computer/telecom fields. It’s one of the most commonly used components in these areas due to its high surge current capability. It can provide protection from electrical overstresses (EOS) and power cross-conditions for any diode-connected power ICs, terminal boards and power supplies. It is also suitable for protection of low-current applications in high-diode-count assemblies such as personal computers or data centres.

Working Principle

The working principle of a TVS-diode is rather simple, as explained in a few steps. Firstly, the ambient air prior to surge arrival causes a form-charge accumulation in the diode which is a forward bias. The second step is that during a surge, the avalanche or bidirectional breakdown voltage of the diode breaks down, resulting in a breakdown of the diode. The diode then produces a low-impedance shunt path for the surge current, allowing electrons to flow until the voltage across the diode declines below the quantity required for further breakdown. The last step is that following the surge, the reverse recovery time begins. During this time, the current carriers recombine with their respective type, and the junction returns to its normal off-state with no additional current flow.

Overall, the SM6T36AHE3/52 component is a great choice, as it offers steady performance and dependable operation at budget friendly prices. With its package and design, as well as its electrical characteristics and applications, it is one of the more trusted TVS-diode components currently on the market.

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