SMA3117-TL-H Allicdata Electronics

SMA3117-TL-H RF/IF and RFID

Allicdata Part #:

SMA3117-TL-HOSDKR-ND

Manufacturer Part#:

SMA3117-TL-H

Price: $ 0.15
Product Category:

RF/IF and RFID

Manufacturer: ON Semiconductor
Short Description: IC AMP MMIC N-CH WIDEBAND MCPH6
More Detail: RF Amplifier IC 6-MCPH
DataSheet: SMA3117-TL-H datasheetSMA3117-TL-H Datasheet/PDF
Quantity: 5870
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 0.13230
10 +: $ 0.11781
100 +: $ 0.09318
500 +: $ 0.07227
1000 +: $ 0.05706
Stock 5870Can Ship Immediately
$ 0.15
Specifications
Series: *
Packaging: Digi-Reel® 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH
Description

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The SMA3117-TL-H is a RF (Radio Frequency) amplifier, designed for use in a variety of applications. It is capable of delivering power up to 1.7 watts with an input voltage of 5 VDC, and is capable of operating at frequencies up to 5GHz. The SMA3117-TL-H is a suitable choice for amplifying signals in both commercial and industrial applications.

The SMA3117-TL-H RF amplifier is designed to operate in a wide range of applications which includes broadcast, satellite communications, cellular systems, end-user products, military electronics, and in medical equipment. It can also be used in antenna applications for wireless networks, RFID systems, microwave communications, and more. The amplifier is capable of providing a significant amount of power with low distortion, which means that it can be used effectively in many different types of applications.

The SMA3117-TL-H amplifier has two major parts, the amplifier stage and the power amplifier. The amplifier stage includes the input/output amplifiers, output transformer, and bias circuits. The power amplifier consists of an output stage and a bias supply. The output stage amplifies the input signal up to 1.7 watts, and the bias supply provides the necessary voltage to ensure the optimal performance of the amplifier.

The working principle of the SMA3117-TL-H RF amplifier is based on the fact that the transistor used in the amplifier is a bipolar transistor. The transistor is configured in a common-emitter arrangement, which means that the input signal is applied to the base of the transistor, and the amplified signal is taken from the collector. As the input signal increases, the transistor will conduct more current, and this will result in an increase in the output power.

The amplifier is designed to operate in various temperature ranges. The amplifier can be optimized for use in a wide variety of applications, such as in high power applications, high frequency applications, or low-noise applications. The amplifier also includes various other features that make it ideal for use in different types of applications, such as its low power consumption, low distortion, wide dynamic range, and low noise floor.

The SMA3117-TL-H RF amplifier is a reliable and efficient RF amplifier, ideal for a wide variety of applications, such as broadcast, satellite communications, end-user products, military electronics, and more. With its wide range of features, the SMA3117-TL-H can provide the performance needed for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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