Allicdata Part #: | SMA5117-ND |
Manufacturer Part#: |
SMA5117 |
Price: | $ 8.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET 6N-CH 250V 7A 12-SIP |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 250V 7A ... |
DataSheet: | SMA5117 Datasheet/PDF |
Quantity: | 100 |
1 +: | $ 7.65450 |
10 +: | $ 6.95898 |
25 +: | $ 6.43709 |
100 +: | $ 5.91513 |
250 +: | $ 5.39321 |
500 +: | $ 5.04526 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 10V |
Power - Max: | 4W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 12-SIP |
Supplier Device Package: | 12-SIP |
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The SMA5117 is a type of MOSFET array designed to be used as an array of transistors in integrated circuits. It is an integrated circuit composed of four MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) connected in parallel. It has a very low on-state resistance, making it suitable for applications that require high levels of current but still require low input levels.
The SMA5117 has a wide range of applications, including power management, motor control, and other applications where high-current control is required. In DC power management applications, for example, the SMA5117 may be used to provide a controllable and low-impedance power source for multiple loads. In motor control applications, the SMA5117 can be used as a multiple-channel circuit switch to control the speed of a motor.
In addition to its high current capacity, the SMA5117 also has a low input voltage drop, low power dissipation, and low EMI (electromagnetic interference) characteristics. This makes it suitable for applications where EMI can be an issue, such as data transmission.
The working principle of the SMA5117 is based on the “metal-oxide-semiconductor field effect transistor” (MOSFET) principle. This means that the device works by having two or more components, one controlling the electrical characteristics of the other. For example, the gate of the transistor is typically controlled by the voltage across the gate, and the source and drain of the transistor can be controlled by the voltage applied to the gate.
When the voltage applied to the gate is low, the gate is “open,” and current will flow from source to drain. When the voltage applied to the gate is high, the gate is “closed,” and current will not flow from source to drain. This is how the SMA5117 works, providing controllable and low-impedance power source for multiple loads.
The SMA5117 array is commonly used in both analog and digital circuits in a wide range of ICs. In analog circuits, it is used as a switch or current-controlled device, while in digital circuits it is used as a logic gate. It is also used to provide the enabling functions required for multiple signals to be generated from one single input control signal.
Overall, the SMA5117 is a versatile component for integrated circuits, providing controllable and low-impedance power source for multiple loads and other application requirements. Its wide range of applications and its ability to offer low power dissipation and EMI characteristics make it ideal for a variety of circuit designs.
The specific data is subject to PDF, and the above content is for reference
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SMA5J20A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
SMA5J22A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
SMA5J24A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
SMA5J26A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
SMA5J28A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
SMA5J30A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
SMA5J33A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
SMA5J36A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
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SMA5J6.0A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
SMA5J6.5A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
SMA5J7.0A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 7V 12V DO214AC |
SMA5J7.5A-E3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
SMA5J6.0A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
SMA5J10A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 10V 17V DO214AC |
SMA5J11A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
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SMA5J13A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
SMA5J14A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
SMA5J15A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
SMA5J16A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 16V 26V DO214AC |
SMA5J17A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
SMA5J18A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
SMA5J20A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
SMA5J33A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
SMA5J36A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
SMA5J40A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 40V 64.5V DO214... |
SMA5J5.0A-E3/61 | Vishay Semic... | -- | 1000 | TVS DIODE 5V 9.2V DO214AC |
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