Allicdata Part #: | SMA5125-ND |
Manufacturer Part#: |
SMA5125 |
Price: | $ 4.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET 3N/3P-CH 60V 10A 12-SIP |
More Detail: | Mosfet Array 3 N and 3 P-Channel (3-Phase Bridge) ... |
DataSheet: | SMA5125 Datasheet/PDF |
Quantity: | 527 |
1 +: | $ 4.30290 |
10 +: | $ 3.87009 |
25 +: | $ 3.52573 |
100 +: | $ 3.18182 |
250 +: | $ 2.92383 |
500 +: | $ 2.66585 |
1000 +: | $ 2.32187 |
Series: | -- |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 10A |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 5A, 4V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 10V |
Power - Max: | 4W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 12-SIP |
Supplier Device Package: | 12-SIP |
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The SMA5125 is a P channel Logic Level Power MOSFET array. It combines the best features of the traditional MOSFET into one package that can be used in many applications. It has a low gate threshold voltage, fast switching speeds, and good thermal conductivity. This makes the SMA5125 ideal for use in low power applications where fast response time is required.
The SMA5125 consists of two subarrays, each containing five discrete P-Channel MOSFET devices. One subarray is dedicated to the lower gate threshold voltage, while the other is dedicated to the higher gate threshold voltage. This allows for flexibility and control when choosing the voltage range that is required for the application. The SMA5125 also has a low total gate charge, allowing for fast switching times.
The SMA5125 has a wide range of applications, including power switching, load switching, data communication, and remote sensing. It can be used to control circuit on/off, or provide a level shifting function. In power switching applications, the SMA5125 can be used to switch off or on the power supply of the device or to switch off or on the power supply of different circuits in a system.
The working principle of the SMA5125 is based on the electrical properties of MOSFETs. When a positive voltage is applied to the Gate of the MOSFET, it creates an electric field that attracts electrons from the Source to the Drain and turns the MOSFET on. When the voltage is removed, the electric field is no longer present, and the MOSFET turns off.
In addition to its low gate threshold voltage and fast switching speeds, another great feature of the SMA5125 is its in built protection circuit. This circuit is designed to protect the chip against static current leakage and overtemperature. This reduces the risk of damage to the device and ensures that it operates safely.
The SMA5125 is a great choice for projects that require fast switching times, low gate threshold voltage, and protection circuits. It is an ideal solution for applications such as power switching, load switching, data communication, and remote sensing. With its low total gate charge, fast switching speeds, and protection circuit, it is the perfect choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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SMA5J20A-E3/61 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
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