SMA5J20A-E3/61

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The SMA5J20A-E3/61 is a transient voltage suppressor (TVS) diode designed to protect sensitive electronic equipment from voltage spikes or electrical overstress events. This TVS diode is designed for bidirectional high speed switching applications such as USB ports, high speed data lines, and power lines. It is rated for low leakage current and low capacitance switching.

The SMA5J20A-E3/61 TVS diode has a low ILEAK of 0.01 mA. This low leakage current rating keeps a circuit from having too much current drain over time. The device also has low capacitance (6 pF) which improves the performance of the device in high speed switching applications. The TVS diode also has an ESD protection level of ±20 kV which helps to protect sensitive components from high voltage transients.

In addition to the ESD protection and low leakage current, the SMA5J20A-E3/61 device also has a breakdown voltage of 5.2 V. This ensures that the diode will effectively clamp any voltage surges up to 4.7 V. This reduces the chance of damage to sensitive components from large voltage surges during overstress events. The device also has a low profile package, making it easy to integrate into cramped circuit boards.

The SMA5J20A-E3/61 TVS diode is designed for a wide range of applications such as protecting USB ports, data lines, and power lines. The low leakage current and low capacitance characteristics make it ideal for high-speed data line protection. The ESD protection and low profile package make it a great choice for use in electronics that need protection from overstress events such as automotive, medical, and industrial electronics.

The working principle of the SMA5J20A-E3/61 TVS diode is based on the reverse-biased avalanche breakdown mechanism. This device utilizes the breakdown voltage to sense the potential voltage differential between its anode and cathode and then clamps the voltage down to protect the component from overvoltage. The device is constructed from silicon semiconductors which are arranged in a PN Junction configuration. When the voltage reaches the PN junction breakdown voltage, the device will start to conduct and will reduce the voltage to a safe level.

In summary, the SMA5J20A-E3/61 TVS diode is an ideal choice for protecting sensitive electronic components from voltage spikes or overstress events. The low profile design, low leakage current, and low capacitance characteristics make it suitable for high speed data line protection. The ESD protection and breakdown voltage make it suitable for use in automotive, medical, or industrial electronics. Finally, the working principle of the TVS diode is based on the reverse-biased avalanche breakdown mechanism which uses the breakdown voltage to protect the component from overvoltage.

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