SMA5J20AHE3/61

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TVS diodes are electrical components designed to protect sensitive electronics against transient over-voltage events. Such events can occur due to static electricity, lightning strikes, and other high voltage electrical disturbances. The SMA5J20AHE3/61 is a three-terminal Unidirectional TVS Diode with advanced silicone avalanche and protection performance intended for transient overvoltage protection. It features an integrated low-capacitance ESD diode, a reverse breakdown voltage from 5.5V to 20V, a unidirectional line-to-ground protection, and a fast response time. In this article, we will discuss the application fields and working principle of the SMA5J20AHE3/61 TVS Diode.

The SMA5J20AHE3/61 TVS Diode is most commonly used in consumer electronics, telecoms, automotive, and industrial applications. This TVS Diode offers a wide range of reverse breakdown voltages which makes it an ideal choice for a variety of industries. For example, in consumer electronics, it can be used to protect sensitive components in audio systems, TVs, and other devices from power surges, while in automotive applications it can be used to protect electrical equipment from voltage spikes caused by lightning strikes. In the telecommunications industry, it can provide protection against overvoltage and ESD events which could potentially damage expensive equipment.

The working principle of the SMA5J20AHE3/61 TVS Diode is relatively simple. The diode is connected in series with the sensitive load. When a voltage above the diode\'s reverse breakdown voltage level is encountered, the diode will conduct current and limit the voltage across the load to a safe, low level, thus protecting the load from damage. The diode is designed to break down at a well-defined reverse voltage level, allowing a limited amount of current to flow through it. The diode then clamps the voltage across it, thus limiting the voltage across the load and protecting the load from damage.

The working principle of the SMA5J20AHE3/61 TVS Diode is based on the avalanche effect. When the voltage across the diode reaches a certain level, electrons start to move through the diode, allowing current to flow and creating an avalanche of electrons that helps to further reduce the voltage, thus limiting it to a safe level and protecting the load. The avalanche effect allows the diode to react to transient over-voltage events very quickly, usually within nanoseconds.

The SMA5J20AHE3/61 TVS Diode also features an integrated low-capacitance ESD diode. This diode provides additional protection against Electrostatic Discharge events, such as those caused by finger touches or short-range static electricity events. The ESD diode acts like a short, reducing the voltage across the load and dissipating the charge into the ground. The low capacitance of the ESD diode helps reduce any induced ringing, minimizing interference with the load.

The SMA5J20AHE3/61 TVS Diode is an excellent solution for protection against transient over-voltage and ESD events in a variety of applications. It features a wide range of reverse breakdown voltages, a fast response time, and an integrated low-capacitance ESD diode which helps reduce interference and protect the load from damage. This diode is ideal for consumer electronics, telecoms, automotive and industrial applications.

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