SMAJ200A-TP Circuit Protection

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A Transient Voltage Suppressor (TVS) diode is a protection device that is designed to protect electronic circuits from voltage transients induced by lightning and other transient voltage events. The SMAJ200A-TP is a Unidirectional TVS diode specifically designed to protect against electrostatic discharge (ESD) and electrical overstress (EOS) transient voltage events.

The SMAJ200A-TP is a bi-directional unidirectional TVS diode made with silicon avalanche technology that uses N-channel MOSFETs with high avalanche voltage and zinc oxide avalanche junction. The device also employs a low on-state voltage drop and is rated for a reverse breakdown voltage (VBR) of 200V with a maximum peak pulse power rating (Ppk) of 188W.

The SMAJ200A-TP is a Type 2 junction diode, which provides better ESD protection than Type 1 junction devices. The device is suitable for a wide range of applications, including automotive, consumer, telecom, and computer applications. It is suitable for high-speed signal lines with low operating Voltage and high line termination voltage rating. It is also suitable for low-leakage lines and data lines with high ESD immunity and transient protection.

The SMAJ200A-TP can also be used in high-current (Idd) and high-voltage (Vdd) applications because of its high peak pulse power rating. It has a low on-state voltage drop, which makes it suitable for use in high-current/low-voltage applications. Its low avalanche current capability makes it acceptable for use in low-current/high-voltage applications.

The SMAJ200A-TP is suitable for use in applications such as battery powered devices, portable equipment, or circuits where circuit board space is limited. It is also suitable for applications with inductive loads such as solar inverters, relays, and switching power supplies.

The working principle of the SMAJ200A-TP is as follows. It works by clamping the voltage at its breakdown voltage (VBR). When the peak power (Ppk) rating of the diode is exceeded, it begins to avalanche and releases the energy into a safe load. During normal operation, the reverse current through the diode is negligible; however, when the device is exposed to a transient voltage, the reverse current increases and the device begins to avalanche dissipating the energy stored in the transient. The diode has a low reverse leakage current, which helps prevent any damage to the circuit.

In summary, the SMAJ200A-TP is a TVS diode specifically designed for electrostatic discharge (ESD) and electrical overstress (EOS) protection. Its N-channel MOSFETs with high avalanche voltage and zinc oxide avalanche junction make it suitable for high-speed signal lines with low operating voltage and high line termination voltage rating. The device is suitable for a wide range of applications, including automotive, consumer, telecom, and computer applications. Its low on-state voltage drop and its low avalanche current capability also make it an ideal choice for high-current/low-voltage and low-current/high-voltage applications.

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